Dr. Roelof F. de Graaf Profile

Dr. Roelof F. de Graaf

at ASML Netherlands BV

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Author

Publications (14)

Proceedings Article | 13 June 2022 Presentation

0.33 NA EUV systems for high-volume manufacturing

Christophe Smeets, Guido Salmaso, Joe Carbone, Marcel Mastenbroek, Nico Benders, Roderik van Es, Roelof de Graaf

Proceedings Volume PC12051, PC1205103 (2022) https://doi.org/10.1117/12.2614220

KEYWORDS: Critical dimension metrology, Control systems, High volume manufacturing, Extreme ultraviolet, Scanners, Reliability, Overlay metrology, Logic devices, Logic

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Proceedings Article | 30 September 2021 Presentation

0.33 NA EUV systems for high-volume manufacturing

Christophe Smeets, Roderik Van Es, Roelof De Graaf, Leon Levasier, Marcel Mastenbroek, Eric Verhoeven

Proceedings Volume 11854, 1185404 (2021) https://doi.org/10.1117/12.2600961

KEYWORDS: High volume manufacturing, Extreme ultraviolet, Scanners, Reliability, Overlay metrology, Logic devices, Logic, Critical dimension metrology, Control systems

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Proceedings Article | 24 March 2017 Paper

Reticle heating feed-forward control (RHC2) on NXT:1980Di immersion scanner for enhanced on-product overlay

Young Ha Kim, Jonghoon Jang, Byeong Soo Lee, Hyunwoo Hwang, Youngsun Nam, Jeong-Heung Kong, Young Seog Kang, Se-Yeon Jang, Bart Paarhuis, Jeroen van der Wielen, Barry Moest, Joris Jongen, Stefan Weichselbaum, Niek Verbeek, Marco Stavenga, Roelof de Graaf, Richard Droste

Proceedings Volume 10147, 1014717 (2017) https://doi.org/10.1117/12.2259792

KEYWORDS: Reticles, Scanners, Distortion, HVAC controls, Optical alignment, Control systems, Thermal effects, Temperature metrology, Semiconducting wafers, Overlay metrology, Calibration

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Scanners in High-Volume-Manufacturing conditions will experience a large range of reticles that vary in reticle transmission and reticle diffraction characteristics. Especially under full production loads reticles will heat up due to the exposure light-load and as such experience thermo-mechanical deformations. The resulting reticle pattern distortion can be partially translated in a deteriorated overall system overlay. Due to the geometry of the reticle and exposure fields, these reticle thermal effects are in general barrel-shape distortions that can be well corrected with the available set of lens manipulators. Nevertheless node-over-node the residual overlay errors associated with thermo-mechanical reticle deformation needs further reduction since it contributes to the total onproduct overlay performance. To reduce overlay caused by reticle temperature drift, NXT1980Di includes an active cooling mechanism suppressing the reticle temperature changes during exposure significantly. Even though the reticle temperature excursions are well suppressed, residual intra-wafer overlay drift effect can still be observed. Before exposure of a wafer, reticle deformation is measured during reticle align using in-line alignment / image sensors (TIS or PARIS). This is enabled by adding alignment markers around the circumference of the image field on the reticle. The measured reticle deformations are then fed to the system control network and dynamically corrected for by making use of the available manipulators in the scanner and the projection lens. Wafer-by-wafer reticle distortion measurements are performed to accurately capture the transient dynamics present in reticle heating during normal production lots. A new version of Reticle Heating Feed-forward Control (RHC2) is introduced that uses reticle-heating-induced deformation measurements over time and exposure sequence information to calibrate reticle-deformation-predictionmodels. These models are based on thermo-mechanical models that simulate reticle deformation under various exposure conditions and are applied in-line to the exposures to reduce intra-wafer overlay drift effects.

Proceedings Article | 24 March 2017 Presentation + Paper

Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity

Bram van Hoof, Arjan Holscher, Ralf Gommers, Jeroen Cottaar, Marcel Raas, Samah Khalek, Jan van Kemenade, Maarten Voncken, Roelof de Graaf, Elliot Oti, Stefan Weichselbaum, Richard Droste, ByeongSoo Lee, Chansam Chang, Young Seog Kang, Young Ha Kim, Jeong-Heung Kong, Jong Hoon Jang, YoungSun Nam, Hyunwoo Hwang

Proceedings Volume 10147, 101471A (2017) https://doi.org/10.1117/12.2259794

KEYWORDS: Semiconducting wafers, Sensors, Time metrology, Scanners, Optical alignment, Calibration, Wafer testing, Overlay metrology, Metrology, Computer programming

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Proceedings Article | 15 March 2016 Paper

NXT:1980Di immersion scanner for 7nm and 5nm production nodes

Roelof de Graaf, Stefan Weichselbaum, Richard Droste, Matthew McLaren, Bert Koek, Wim de Boeij

Proceedings Volume 9780, 978011 (2016) https://doi.org/10.1117/12.2220589

KEYWORDS: Reticles, Scanners, Semiconducting wafers, Optical alignment, Overlay metrology, Calibration, Sensors, Control systems, Imaging systems, Semiconductor manufacturing

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Proceedings Article | 15 March 2016 Paper

Improvement of unbalanced illumination induced telecentricity within the exposure slit

Jonghoon Jang, ByeongSoo Lee, Young Seog Kang, Chansam Chang, Jeong-Heung Kong, Young Ha Kim, Wim Bouman, Roelof de Graaf, Stefan Weichselbaum, Richard Droste, Wim de Boeij, Bart van Bussel, Patrick Neefs, Arij Rijke

Proceedings Volume 9780, 97800X (2016) https://doi.org/10.1117/12.2220588

KEYWORDS: Lithography, Lithographic illumination, Optical alignment, Scanners, Optical lithography, Image enhancement, Reticles, Electronics

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Proceedings Article | 15 March 2016 Paper

Overcoming low-alignment signal contrast induced alignment failure by alignment signal enhancement

Byeong Soo Lee, Young Ha Kim, Hyunwoo Hwang, Jeongjin Lee, Jeong Heung Kong, Young Seog Kang, Bart Paarhuis, Haico Kok, Roelof de Graaf, Stefan Weichselbaum, Richard Droste, Christopher Mason, Igor Aarts, Wim de Boeij

Proceedings Volume 9780, 97800B (2016) https://doi.org/10.1117/12.2220587

KEYWORDS: Optical alignment, Signal processing, Overlay metrology, Optical lithography, Optics manufacturing, Opacity, Materials processing, Sensors, Wafer testing, Near infrared, Image processing

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Proceedings Article | 18 March 2015 Paper

Immersion and dry scanner extensions for sub-10nm production nodes

Stefan Weichselbaum, Frank Bornebroek, Toine de Kort, Richard Droste, Roelof de Graaf, Rob van Ballegoij, Herman Botter, Matthew McLaren, Wim de Boeij

Proceedings Volume 9426, 942616 (2015) https://doi.org/10.1117/12.2087112

KEYWORDS: Semiconducting wafers, Scanners, Reticles, Imaging systems, Neodymium, Calibration, Metrology, Lithography, Optical lithography, Overlay metrology

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Proceedings Article | 12 April 2013 Paper

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Jan Mulkens, Michael Kubis, Paul Hinnen, Roelof de Graaf, Hans van der Laan, Alexander Padiy, Boris Menchtchikov

Proceedings Volume 8683, 86831J (2013) https://doi.org/10.1117/12.2011550

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Metrology, Lithography, Actuators, Calibration, Reticles, Photomasks, Control systems

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Proceedings Article | 12 April 2013 Paper

Extending immersion lithography down to 1x nm production nodes

Wim de Boeij, Remi Pieternella, Igor Bouchoms, Martijn Leenders, Marjan Hoofman, Roelof de Graaf, Haico Kok, Par Broman, Joost Smits, Jan-Jaap Kuit, Matthew McLaren

Proceedings Volume 8683, 86831L (2013) https://doi.org/10.1117/12.2021397

KEYWORDS: Reticles, Scanners, Semiconducting wafers, HVAC controls, Overlay metrology, Calibration, Sensors, Metrology, Distortion, Optical lithography

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Proceedings Article | 13 March 2012 Paper

Extending 1.35 NA immersion lithography down to 1x nm production nodes

Igor Bouchoms, Martijn Leenders, Jan Jaap Kuit, Robert Kazinczi, Roelof de Graaf, Bart Paarhuis, Pieter Gunter, Stefan Weichselbaum, Marcel Beems, Martin Verhoeven, Rob van Ballegoij

Proceedings Volume 8326, 83260L (2012) https://doi.org/10.1117/12.915807

KEYWORDS: Semiconducting wafers, Reticles, Sensors, Scanners, Control systems, Optical alignment, HVAC controls, Wavefronts, Process control, Lithography

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Proceedings Article | 4 March 2010 Paper

Advanced imaging with 1.35 NA immersion systems for volume production

Igor Bouchoms, Jan Mulkens, Sander de Putter, Pieter Gunter, Roelof de Graaf, Marcel Beems, Erwin Verdurmen, Hans Jasper, Nils Dieckmann, Frank Bornebroek

Proceedings Volume 7640, 76401R (2010) https://doi.org/10.1117/12.845597

KEYWORDS: Semiconducting wafers, Reticles, Scanners, Control systems, Imaging systems, Critical dimension metrology, Logic, Overlay metrology, Wavefronts, Optical alignment

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Proceedings Article | 16 March 2009 Paper

Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion

Igor Bouchoms, Andre Engelen, Jan Mulkens, Herman Boom, Richard Moerman, Paul Liebregts, Roelof de Graaf, Marieke van Veen, Patrick Thomassen, Wolfgang Emer, Frank Sperling

Proceedings Volume 7274, 72741K (2009) https://doi.org/10.1117/12.813649

KEYWORDS: Semiconducting wafers, Imaging systems, Polarization, Optical lithography, Control systems, Critical dimension metrology, Printing, Thin film coatings, Immersion lithography, Lithography

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Proceedings Article | 18 August 1997 Paper

Laser cutting of laminated sheet material: a modeling exercise

Roelof de Graaf, Johan Meijer

Proceedings Volume 3097, (1997) https://doi.org/10.1117/12.281102

KEYWORDS: Laser cutting, Aluminum, Absorption, Metals, Fusion energy, Laser development, Carbon dioxide lasers, Heat flux, Nd:YAG lasers, Epoxies

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Showing 5 of 14 publications

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