ASML NXE:3400 and NXE:3600D scanners are now commonly used for High Volume Manufacturing (HVM) of 7 nm to 3 nm logic devices as well as 10 nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity
Furthermore, we will describe the latest technology supporting the ASML roadmap for further improving cost of technology via increased productivity and share system qualification and performance data of the next HVM scanner, the NXE:3800E.
Lastly the ASML NXE sustainability roadmap showing progress and steps towards a significant reduction in energy consumption per wafer exposure on NXE systems will be presented.
ASML NXE:3400 and NXE:3600D scanners are firmly embedded in High Volume Manufacturing (HVM) of 7 nm to 3 nm logic devices as well as 10 nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will describe the latest technology supporting the ASML roadmap for further improving cost of technology via increased productivity and share system qualification and performance data of the next HVM scanner, the NXE:3800E.
Lastly the ASML NXE sustainability roadmap showing progress and steps towards a significant reduction in energy consumption per wafer exposure on NXE systems will be presented.
ASML NXE (0.33 NA) scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5 nm logic devices as well as 1z memory node devices. In 2021, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and 1a and 1b memory nodes. This system has entered the HVM phase and is shipping in volume. In this paper we will share the latest performance, with excellent imaging, overlay and productivity results. For the latter we will show record performance of 185 Wafers per Hour at dose 30mJ/cm2 and over 3000 Wafers per Day at customer. Furthermore, we will address the ASML roadmap and introduce the NXE:3800E scanner. The NXE:3800E will first ship in the fourth quarter of 2023, targeting the 2 nm logic node. Lastly, ASML will show its carbon footprint and energy reduction roadmap.
ASML NXE:3400 and NXE:3600D scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm to 3nm logic devices as well as 10nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. In 2021, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. This year, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
EUV pellicles have been enabled to provide customers with defect protection for EUV reticles. However, due to the absorption that is much higher than for DUV pellicles, using the pellicle has certain disadvantages. Most significant is the reduction in throughput caused by the absorption of EUV photons in the pellicle. This leads to a customer decision to use a pellicle and accept the reduced throughput, or to not use a pellicle and have additional inspection steps to check the cleanliness of the EUV reticle. These tradeoffs vary by customer and use case. This study addresses the balance of factors for using or not using a pellicle through a cost comparison.
With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUV-compatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus on the latter approach of advanced particle contamination control and will show that we are able to reduce particle contamination towards reticle to a level that is compatible with HVM requirements for sub-10nm node lithography.
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