Dr. Cheng Chi Profile

Dr. Cheng Chi

at IBM Thomas J Watson Research Ctr

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Author

Publications (14)

Proceedings Article | 22 April 2021 Presentation + Paper

Speeding up OPC by leveraging existing designs with machine learning

Cheng Chi, Julian Dolby, Jeffrery Shearer, Derren Dunn, Sean Burns

Proceedings Volume 11614, 116140N (2021) https://doi.org/10.1117/12.2584621

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Proceedings Article | 17 April 2020 Presentation + Paper

Dual tone sub-resolution assist features to improve corner rounding

Cheng Chi, Hao Tang, Oseo Park, Jing Xue, Jing Guo, Geng Han, Charlie King, Jeff Shearer, Sean Burns

Proceedings Volume 11327, 113270E (2020) https://doi.org/10.1117/12.2550834

KEYWORDS: SRAF, Photomasks, Semiconducting wafers, Optical proximity correction, Data modeling, Yield improvement, Optics manufacturing, Optical lithography, Deep ultraviolet, Logic

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Proceedings Article | 26 March 2019 Presentation + Paper

LCDU improvement of EUV-patterned vias with DSA

Jing Guo, Dustin Janes, Yann Mignot, Richard Johnson, Cheng Chi, Chi-Chun Liu, Luciana Meli, Takuya Kuroda, Domenico DiPaola, Yuji Tanaka, Harumoto Masahiko, Nelson Felix, Daniel Corliss

Proceedings Volume 10958, 109580N (2019) https://doi.org/10.1117/12.2515153

KEYWORDS: Polymethylmethacrylate, Optical lithography, Extreme ultraviolet lithography, Critical dimension metrology, Etching, Chemistry, Ultraviolet radiation, Defect inspection, Extreme ultraviolet, Polymers

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Lithographic and pitch-multiplying spacer technologies are widely used to shrink interconnect periodicity within critical layers. This places significant burden on overlay and CD uniformity of the subsequently patterned vias to physically contact and electrically connect critical layers to the rest of the integrated circuit in a nearly defect-free and perfectly-consistent manner. We are evaluating the combination of EUV and DSA patterning technologies to meet this challenge and enable future technology nodes. The contact hole guide pattern is fabricated atop bilayer hardmask material by single-exposure EUV, surface-modified with telechelic polymer brush materials, and finally shrunk/rectified using self-assembled, lamella-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA). The nascent via pattern is then blanket exposed by DUV light and the photolyzed PMMA is selectively rinsed away. Here we study the process performance of DSA pattern wet etch chemistry and subsequent dry etch pattern transfer into bilayer hardmask material using both metrology and electrical yield measurements as evaluation criteria. In particular, the choice of wet etch solvation strength selective towards PMMA was varied from moderate (isopropanol, IPA) to good (acetic acid, AAc). Due to the ability of AAC to solubilize all covalently-untethered PMMA, regardless of molecular weight, the resulting average CD is wider and its local distribution is more uniform. In contrast, IPA is only capable of rinsing away the smallest PMMA fragments, resulting in relatively tighter bounds about the preferable blanket UV dose, and a smaller average CD and less-uniform local CD distribution. These morphological differences are confirmed by cross-sectional transmission electron micrographs. Brightfield inspection and inline electrical testing are used to compare relative defectivity and yield, respectively, to assess the potential impact on device performance for processes utilizing either solvent.

Proceedings Article | 6 September 2018 Paper

Computational enablement for designs with sub-20nm metal tip to tip using cut shapes from grapho-epitaxy directed self-assembly

Balint Meliorisz, Kafai Lai, Ulrich Welling, Hans-Jürgen Stock, Sajan Marokkey, Thomas Muelders, Jing Sha, Chi-chun Liu, Cheng Chi, Jing Guo, Clifford Osborn, Jaime Morillo, Wolfgang Demmerle, Derren Dunn

Proceedings Volume 10586, 105860R (2018) https://doi.org/10.1117/12.2297344

KEYWORDS: Metals, Directed self assembly, Critical dimension metrology, Calibration, Error analysis, Etching, Computer simulations, Process modeling, Optical lithography, Extreme ultraviolet lithography

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Proceedings Article | 28 March 2018 Paper

The integration of 193i and DSA for BEOL metal cuts/blocks targeting sub-20nm tip-to-tip CD

Chi-Chun Liu, Yann Mignot, Cheng Chi, Richard Farrell, Kafai Lai, Jing Guo, Jing Sha, Martin Glodde, Makoto Muramatsu, Yasuyuki Ido, Nelson Felix, David Hetzer, Andrew Metz, Daniel Corliss

Proceedings Volume 10584, 105840L (2018) https://doi.org/10.1117/12.2297365

KEYWORDS: Etching, Critical dimension metrology, Metals, Directed self assembly, Oxides, Back end of line, Dielectrics, Scanning electron microscopy, Tin, Lithography

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SPIE Journal Paper | 28 August 2017

Ultrathin extreme ultraviolet patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Chi-Chun Charlie Liu, Cheng Chi, Jing Guo, Hoa Truong, Kristin Schmidt, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

JM3, Vol. 16, Issue 03, 033506, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033506

KEYWORDS: Oxides, Polymers, Extreme ultraviolet, Optical lithography, Head-mounted displays, Etching, Atomic layer deposition, Chemistry, Plasma enhanced chemical vapor deposition, Printing

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Proceedings Article | 27 April 2017 Presentation + Paper

Advanced fast 3D DSA model development and calibration for design technology co-optimization

Kafai Lai, Balint Meliorisz, Thomas Muelders, Ulrich Welling, Hans-Jürgen Stock, Sajan Marokkey, Wolfgang Demmerle, Chi-Chun Liu, Cheng Chi, Jing Guo

Proceedings Volume 10144, 101440H (2017) https://doi.org/10.1117/12.2260379

KEYWORDS: 3D modeling, Calibration, Data modeling, Optical lithography, Nanotechnology, Very large scale integration, System on a chip, Logic, Research facilities

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Proceedings Article | 13 April 2017 Presentation + Paper

Electrical study of DSA shrink process and CD rectification effect at sub-60nm using EUV test vehicle

Cheng Chi, Chi-Chun Liu, Luciana Meli, Jing Guo, Doni Parnell, Yann Mignot, Kristin Schmidt, Martha Sanchez, Richard Farrell, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Yongan Xu, Daniel Sanders, David Hetzer, Andrew Metz, Sean Burns, Nelson Felix, John Arnold, Daniel Corliss

Proceedings Volume 10146, 101460Q (2017) https://doi.org/10.1117/12.2260454

KEYWORDS: Etching, Directed self assembly, Polymethylmethacrylate, Critical dimension metrology, Picosecond phenomena, Oxides, Scanning electron microscopy, Optical lithography, Extreme ultraviolet, Metals

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Proceedings Article | 27 March 2017 Paper

DSA patterning options for logics and memory applications

Chi-Chun Liu, Elliott Franke, Yann Mignot, Scott LeFevre, Stuart Sieg, Cheng Chi, Luciana Meli, Doni Parnell, Kristin Schmidt, Martha Sanchez, Lovejeet Singh, Tsuyoshi Furukawa, Indira Seshadri, Ekmini Anuja De Silva, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Robert Bruce, Mark Somervell, Daniel Sanders, Nelson Felix, John Arnold, David Hetzer, Akiteru Ko, Andrew Metz, Matthew Colburn, Daniel Corliss

Proceedings Volume 10146, 1014603 (2017) https://doi.org/10.1117/12.2260479

KEYWORDS: Directed self assembly, Plasma etching, Optical lithography, Etching, Logic, Lithography, Manufacturing, Nanofabrication, Silicon, Metals, Extreme ultraviolet, Line edge roughness, Optical alignment, Critical dimension metrology

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Proceedings Article | 24 March 2017 Presentation + Paper

Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Charlie Liu, Cheng Chi, Jing Guo, Kristin Schmidt, Hoa Truang, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

Proceedings Volume 10143, 101431D (2017) https://doi.org/10.1117/12.2258565

KEYWORDS: Extreme ultraviolet, Optical lithography, Polymers, Etching, Extreme ultraviolet lithography, Photoresist materials, Lithography, Photoresist processing, Back end of line, Oxides, Head-mounted displays, Atomic layer deposition, Chemistry

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SPIE Journal Paper | 7 February 2017

Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Kafai Lai, Chi-Chun Liu, Hsinyu Tsai, Yongan Xu, Cheng Chi, Ananthan Raghunathan, Parul Dhagat, Lin Hu, Oseo Park, Sunggon Jung, Wooyong Cho, Jaime Morillo, Jed Pitera, Kristin Schmidt, Mike Guillorn, Markus Brink, Daniel Sanders, Nelson Felix, Todd Bailey, Matthew Colburn

JM3, Vol. 16, Issue 01, 013502, (February 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.1.013502

KEYWORDS: Directed self assembly, Resolution enhancement technologies, Lithography, Metals, Optical lithography, Photomasks, 3D modeling, Computational lithography, Optical proximity correction

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Proceedings Article | 4 April 2016 Paper

DSA via hole shrink for advanced node applications

Cheng Chi, Chi-Chun Liu, Luciana Meli, Kristin Schmidt, Yongan Xu, Ekmini Anuja DeSilva, Martha Sanchez, Richard Farrell, Hongyun Cottle, Daiji Kawamura, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Jed Pitera, Daniel Sanders, David Hetzer, Andrew Metz, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770L (2016) https://doi.org/10.1117/12.2219706

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Picosecond phenomena, Etching, Global Positioning System, Critical dimension metrology, Optical lithography, Lithography, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 1 April 2016 Paper

Strategies to enable directed self-assembly contact hole shrink for tight pitches

Kristin Schmidt, Hitoshi Osaki, Kota Nishino, Martha Sanchez, Chi-Chun Liu, Tsuyoshi Furukawa, Cheng Chi, Jed Pitera, Nelson Felix, Daniel Sanders

Proceedings Volume 9777, 97771U (2016) https://doi.org/10.1117/12.2219213

KEYWORDS: Surface properties, Integrated circuits, Semiconductors, Monte Carlo methods, Directed self assembly, Picosecond phenomena, Polymethylmethacrylate, Chemistry, Atomic force microscopy, Scattering, Lithography

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Proceedings Article | 16 March 2015 Paper

Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?

J. Torres, Fan Jiang, Yuansheng Ma, Joerg Mellman, Kafai Lai, Ananthan Raghunathan, Yongan Xu, Chi-Chun Liu, Cheng Chi

Proceedings Volume 9422, 94220W (2015) https://doi.org/10.1117/12.2085959

KEYWORDS: Line edge roughness, Extreme ultraviolet, Polymethylmethacrylate, Picosecond phenomena, Lithography, Polymers, Directed self assembly, Monte Carlo methods, Visualization, Extreme ultraviolet lithography

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Showing 5 of 14 publications

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