Dr. Patricia Pimenta-Barros Profile

Dr. Patricia Pimenta-Barros

at Cea;Leti

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 19 March 2018 Presentation + Paper

Process development of a maskless N40 via level for security application with multi-beam lithography

Isabelle Servin, Patricia Pimenta-Barros, Arthur Bernadac, Jonathan Pradelles, Allan Germain, Yoann Blancquaert, Philippe Essomba, Stefan Landis, Gerard ten Berge, Marco Wieland, Philippe Brun

Proceedings Volume 10584, 1058411 (2018) https://doi.org/10.1117/12.2297162

KEYWORDS: Etching, Semiconducting wafers, Lithography, Scanning electron microscopy, System on a chip, Optical alignment, Electron beam lithography, Metals, Back end of line, Copper

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Proceedings Article | 19 March 2018 Presentation + Paper

Pillars fabrication by DSA lithography: material and process options

A. Gharbi, P. Pimenta-Barros, O. Saouaf, G. Reynaud, L. Pain, R. Tiron, C. Navarro, C. Nicolet, I. Cayrefourcq, M. Perego, F. Pérez-Murano, E. Amat, M. Fernández-Regúlez

Proceedings Volume 10586, 105860Q (2018) https://doi.org/10.1117/12.2297414

KEYWORDS: Polymethylmethacrylate, Picosecond phenomena, Directed self assembly, Annealing, Etching, Scanning electron microscopy, Dry etching, Silicon, Lithography, Plasma etching

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Proceedings Article | 19 March 2018 Paper

Precise control of template affinity achieved by UV-assisted graphoepitaxy approach on silicon nanowires applications

P. Pimenta-Barros, G. Claveau, M. Argoud, Z. Chalupa, N. Allouti, C. Comboroure, G. Chamiot-Maitral, N. Posseme, L. Pain, R. Tiron, C. Navarro, C. Nicolet, I. Cayrefourcq

Proceedings Volume 10584, 105840C (2018) https://doi.org/10.1117/12.2297407

KEYWORDS: Etching, Silicon, Ultraviolet radiation, Directed self assembly, Polymethylmethacrylate, Scanning electron microscopy, Plasma, Nanowires, Line width roughness, Surface properties

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Proceedings Article | 19 March 2018 Presentation

Inorganic guiding template implementation for DSA contact hole shrink process (Conference Presentation)

Ahmed Gharbi, Florian DELACHAT, Patricia Pimenta-Barros, Gaëlle Chamiot-Maitral, Maxime Argoud, Celine Lapeyre, Laurent Pain, Christophe Navarro, Célia Nicolet, Ian Cayrefourcq, Raluca Tiron

Proceedings Volume 10584, 105840D (2018) https://doi.org/10.1117/12.2297422

KEYWORDS: Directed self assembly, Optical lithography, Critical dimension metrology, Silicon, Oxides, Semiconducting wafers, Semiconductors, Materials processing, Photomasks, Photoresist processing

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Proceedings Article | 10 April 2017 Presentation + Paper

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

S. Landis, H. Teyssedre, G. Claveau, I. Servin, F. Delachat, M. L. Pourteau, A. Gharbi, P. Pimenta Barros, R. Tiron, L. Nouri, N. Possemé, M. May, P. Brianceau, S. Barnola, Y. Blancquaert, J. Pradelles, P. Essomba, A. Bernadac, B. Dal'zotto, S. Bos, M. Argoud, G. Chamiot-Maitral, A. Sarrazin, C. Tallaron, C. Lapeyre, L. Pain

Proceedings Volume 10149, 101490K (2017) https://doi.org/10.1117/12.2259966

KEYWORDS: Directed self assembly, Lithography, Line width roughness, Nanoimprint lithography, Semiconducting wafers, Etching, Electron beam lithography, System on a chip, Critical dimension metrology, Photoresist processing

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Proceedings Article | 21 March 2017 Paper

Latest evolution in a 300mm graphoepitaxy pilot line flow for L/S applications

G. Claveau, M. Argoud, P. Pimenta-Barros, G. Chamiot-Maitral, R. Tiron, X. Chevalier, C. Navarro

Proceedings Volume 10144, 1014411 (2017) https://doi.org/10.1117/12.2257969

KEYWORDS: Self organized materials, Line width roughness, Line edge roughness, Optical lithography, Polymethylmethacrylate, Directed self assembly, Immersion lithography, Etching, Critical dimension metrology, Macromolecules, Applied physics, Ultraviolet radiation, Lithography, Photomasks, 193nm lithography

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Proceedings Article | 21 March 2017 Paper

Advanced surface affinity control for DSA contact hole shrink applications

Florian Delachat, Ahmed Gharbi, Patricia Pimenta Barros, Maxime Argoud, Céline Lapeyre, Sandra Bos, Jérôme Hazart, Laurent Pain, Cédric Monget, Xavier Chevalier, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron

Proceedings Volume 10144, 101440O (2017) https://doi.org/10.1117/12.2258043

KEYWORDS: Directed self assembly, Lithography, Immersion lithography, Polymers, Semiconducting wafers, Polymethylmethacrylate, Scanning electron microscopy, Inspection, Image processing, Picosecond phenomena

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SPIE Journal Paper | 18 October 2016

Process highlights to enhance directed self-assembly contact patterning performances

Ahmed Gharbi, Raluca Tiron, Maxime Argoud, Gaëlle Chamiot-Maitral, Antoine Fouquet, Céline Lapeyre, Patricia Pimenta-Barros, Florian Delachat, Sandra Bos, Shayma Bouanani, Xavier Chevalier, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Laurent Pain

JM3, Vol. 15, Issue 04, 043503, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043503

KEYWORDS: Directed self assembly, Optical lithography, Annealing, Picosecond phenomena, Critical dimension metrology, Scanning electron microscopy, Materials processing, Semiconducting wafers, Lithography, Molecular self-assembly

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SPIE Journal Paper | 25 August 2016

Surface affinity role in graphoepitaxy of lamellar block copolymers

Guillaume Claveau, Patrick Quemere, Maxime Argoud, Jerome Hazart, Patricia Pimenta-Barros, Aurelien Sarrazin, Nicolas Posseme, Raluca Tiron, Xavier Chevalier, Celia Nicolet, Christophe Navarro

JM3, Vol. 15, Issue 03, 031604, (August 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.031604

KEYWORDS: Directed self assembly, Annealing, Polymethylmethacrylate, Line width roughness, Picosecond phenomena, Semiconducting wafers, Lithography, Optical lithography, Image registration, Plasma

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SPIE Journal Paper | 27 April 2016

Placement error in directed self-assembly of block copolymers for contact hole application

Shayma Bouanani, Raluca Tiron, Sandra Bos, Ahmed Gharbi, Patricia Pimenta-Barros, Jérôme Hazart, Frédéric Robert, Céline Lapeyre, Alain Ostrovsky, Cédric Monget

JM3, Vol. 15, Issue 02, 021407, (April 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021407

KEYWORDS: Directed self assembly, Critical dimension metrology, Polymethylmethacrylate, Smoothing, Image processing, Materials processing, Edge detection, Polymers, Error analysis, Metrology

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Proceedings Article | 23 March 2016 Paper

PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

A. Sarrazin, N. Posseme, P. Pimenta Barros, S. Barnola, G. Claveau, A. Gharbi, M. Argoud, G. Chamiot-Maitral, R. Tiron, C. Nicolet, C. Navarro, C. Cardinaud

Proceedings Volume 9782, 97820G (2016) https://doi.org/10.1117/12.2220586

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Chemistry, Picosecond phenomena, Etching, Xenon, Plasma, Carbon monoxide, Plasma etching, Semiconducting wafers

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Proceedings Article | 22 March 2016 Paper

Process highlights to enhance DSA contact patterning performances

A. Gharbi, R. Tiron, M. Argoud, G. Chamiot-Maitral, A. Fouquet, C. Lapeyre, P. Pimenta Barros, A. Sarrazin, I. Servin, F. Delachat, S. Bos, S. Bérard-Bergery, J. Hazart, X. Chevalier, C. Nicolet, C. Navarro, I. Cayrefourcq, S. Bouanani, C. Monget

Proceedings Volume 9777, 97770T (2016) https://doi.org/10.1117/12.2219210

KEYWORDS: Directed self assembly, Optical lithography, Inspection, Lithography, Etching, Semiconducting wafers, Scanning electron microscopy, Defect detection, Critical dimension metrology, Materials processing, Photomasks, Picosecond phenomena, Annealing, Molecular self-assembly, Image processing

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Proceedings Article | 21 March 2016 Paper

Surface affinity role in graphoepitaxy of lamellar block copolymers

G. Claveau, P. Quemere, M. Argoud, J. Hazart, P. Pimenta Barros, A. Sarrazin, N. Posseme, R. Tiron, X. Chevalier, C. Nicolet, C. Navarro

Proceedings Volume 9779, 97791F (2016) https://doi.org/10.1117/12.2219131

KEYWORDS: Line width roughness, Polymers, Directed self assembly, Optical lithography, Line edge roughness, 193nm lithography, Semiconducting wafers, Statistical analysis, Polymer thin films, Annealing, Polymethylmethacrylate, Lithography, Image registration, Photomasks

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SPIE Journal Paper | 18 June 2015

Contact holes patterning by directed self-assembly of block copolymers: process window study

Ahmed Gharbi, Raluca Tiron, Maxime Argoud, Xavier Chevalier, Patricia Pimenta-Barros, Célia Nicolet, Christophe Navarro

JM3, Vol. 14, Issue 02, 023508, (June 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023508

KEYWORDS: Critical dimension metrology, Optical lithography, Semiconducting wafers, Annealing, Coating, Scanning electron microscopy, Lithography, Tolerancing, Inspection, Directed self assembly

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Proceedings Article | 27 March 2015 Paper

193i lithography for contact doubling with grapho-epitaxy DSA: a simulation study

A. Fouquet, L. Perraud, S. Bérard-Bergery, A. Gharbi, P. Pimenta-Barros, R. Tiron, J. Hazart, V. Farys

Proceedings Volume 9423, 942324 (2015) https://doi.org/10.1117/12.2085822

KEYWORDS: Lithography, Optical proximity correction, Optical lithography, 3D modeling, Scanners, Photomasks, Ions, Neck, Neodymium, Directed self assembly

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Proceedings Article | 20 March 2015 Paper

Development and integration of systems with enhanced resolutions based on Si-containing block copolymers for line space applications

G. Fleury, K. Aissou, M. Mumtaz, X. Chevalier, C. Nicolet, C. Navarro, M. Fernandez-Regulez, P. Pimenta-Barros, R. Tiron, C. Brochon, E. Cloutet, G. Hadziioannou

Proceedings Volume 9425, 94250Z (2015) https://doi.org/10.1117/12.2085721

KEYWORDS: Etching, Thin films, Scanning electron microscopy, Plasma, Polymethylmethacrylate, Lithography, System integration, Plasma etching, Optical lithography, Directed self assembly

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Proceedings Article | 20 March 2015 Paper

Blending approaches to enhance structural order in block-copolymer's self-assemblies

X. Chevalier, C. Nicolet, A. Gharbi, P. Pimenta-Barros, R. Tiron, G. Fleury, G. Hadziioannou, I. Iliopoulos, C. Navarro

Proceedings Volume 9425, 94251N (2015) https://doi.org/10.1117/12.2085821

KEYWORDS: Microelectronics, Lithography, Neodymium, Scanning electron microscopy, Critical dimension metrology, Polymethylmethacrylate, Oxygen, Ions, Thermodynamics, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Template affinity role in CH shrink by DSA planarization

R. Tiron, A. Gharbi, P. Pimenta Barros, S. Bouanani, C. Lapeyre, S. Bos, A. Fouquet, J. Hazart, X. Chevalier, M. Argoud, G. Chamiot-Maitral, S. Barnola, C. Monget, V. Farys, S. Berard-Bergery, L. Perraud, C. Navarro, C. Nicolet, G. Hadziioannou, G. Fleury

Proceedings Volume 9423, 942317 (2015) https://doi.org/10.1117/12.2085819

KEYWORDS: Polymethylmethacrylate, Lithography, Semiconducting wafers, Picosecond phenomena, Etching, Error analysis, Optical lithography, Line edge roughness, Image processing, Directed self assembly

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Density multiplication and contact shrinkage of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitations of conventional lithography. The main goal of this paper is to investigate the potential of DSA to address contact and via levels patterning with high resolution by performing either CD shrink or contact multiplication. Different DSA processes are benchmarked based on several success criteria such as: CD control, defectivity (missing holes) as well as placement control. More specifically, the methodology employed to measure DSA contact overlay and the impact of process parameters on placement error control is detailed. Using the 300mm pilot line available in LETI and Arkema’s materials, our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Our integration scheme, depicted in figure 1, is based on BCP self-assembly inside organic hard mask guiding patterns obtained using 193i nm lithography. The process is monitored at different steps: the generation of guiding patterns, the directed self-assembly of block copolymers and PMMA removal, and finally the transfer of PS patterns into the metallic under layer by plasma etching. Furthermore, several process flows are investigated, either by tuning different material related parameters such as the block copolymer intrinsic period or the interaction with the guiding pattern surface (sidewall and bottom-side affinity). The final lithographic performances are finely optimized as a function of the self-assembly process parameters such as the film thickness and bake (temperature and time). Finally, DSA performances as a function of guiding patterns density are investigated. Thus, for the best integration approach, defect-free isolated and dense patterns for both contact shrink and multiplication (doubling and more) have been achieved on the same processed wafer. These results show that contact hole shrink and multiplication approach using DSA is well compatible with the conventional integration used for CMOS technology.

Proceedings Article | 19 March 2015 Paper

Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Isabelle Servin, Ndeye Arame Thiam, Patricia Pimenta-Barros, Marie-Line Pourteau, Armel-Petit Mebiene, Julien Jussot, Jonathan Pradelles, Philippe Essomba, Ludovic Lattard, Pieter Brandt, Marco Wieland

Proceedings Volume 9423, 94231C (2015) https://doi.org/10.1117/12.2085915

KEYWORDS: Line width roughness, Lithography, Etching, Electron beam lithography, System on a chip, Metals, Scanning electron microscopy, Silicon, Resistance, Extreme ultraviolet

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Proceedings Article | 17 March 2015 Paper

DSA planarization approach to solve pattern density issue

P. Pimenta Barros, A. Gharbi, Aurélien Sarrazin, R. Tiron, N. Posseme, S. Barnola, S. Bos, C. Tallaron, G. Claveau, X. Chevalier, M. Argoud, Isabelle Servin, C. Navarro, Célia Nicolet, C. Lapeyre, C. Monget

Proceedings Volume 9428, 94280D (2015) https://doi.org/10.1117/12.2086810

KEYWORDS: Polymethylmethacrylate, Etching, Critical dimension metrology, Picosecond phenomena, Semiconducting wafers, Chemistry, Scanning electron microscopy, Carbon monoxide, Dry etching, Directed self assembly

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Proceedings Article | 17 March 2015 Paper

Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Emmanuel Dupuy, E. Pargon, M. Fouchier, H. Grampeix, J. Pradelles, M. Darnon, P. Pimenta-Barros, S. Barnola, O. Joubert

Proceedings Volume 9428, 94280B (2015) https://doi.org/10.1117/12.2085812

KEYWORDS: Line edge roughness, Line width roughness, Plasma, Etching, Critical dimension metrology, Plasma etching, Silicon, Oxygen, Photoresist processing, Neodymium

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