PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

A. Sarrazin; N. Posseme; P. Pimenta Barros; S. Barnola; G. Claveau; A. Gharbi; M. Argoud; G. Chamiot-Maitral; R. Tiron; C. Nicolet; C. Navarro; C. Cardinaud

doi:10.1117/12.2220586

23 March 2016 PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

A. Sarrazin, N. Posseme, P. Pimenta Barros, S. Barnola, G. Claveau, A. Gharbi, M. Argoud, G. Chamiot-Maitral, R. Tiron, C. Nicolet, C. Navarro, C. Cardinaud

Author Affiliations +

Proceedings Volume 9782, Advanced Etch Technology for Nanopatterning V; 97820G (2016) https://doi.org/10.1117/12.2220586
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

For sub-10nm technologies, the semiconductor industry is facing the limits of conventional lithography to achieve narrow dimensions. DSA (Directed Self-Assembly) of Block Copolymers (BCP) is one of the most promising solutions to reach sub-10nm patterns with a high density. One challenge for DSA integration is the removal of PMMA selectively to PS. In this paper, we propose to study PMMA removal selectively to PS by screening different plasma etch chemistries. These chemistries developed on blanket wafers have been tested on cylindrical and lamellar patterned wafers.

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A. Sarrazin, N. Posseme, P. Pimenta Barros, S. Barnola, G. Claveau, A. Gharbi, M. Argoud, G. Chamiot-Maitral, R. Tiron, C. Nicolet, C. Navarro, and C. Cardinaud "PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application", Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820G (23 March 2016); https://doi.org/10.1117/12.2220586

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