Dr. Marc Fouchier Profile

Dr. Marc Fouchier

at LTM CNRS

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 17 March 2015 Paper

Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Emmanuel Dupuy, E. Pargon, M. Fouchier, H. Grampeix, J. Pradelles, M. Darnon, P. Pimenta-Barros, S. Barnola, O. Joubert

Proceedings Volume 9428, 94280B (2015) https://doi.org/10.1117/12.2085812

KEYWORDS: Line edge roughness, Line width roughness, Plasma, Etching, Critical dimension metrology, Plasma etching, Silicon, Oxygen, Photoresist processing, Neodymium

Read Abstract +

SPIE Journal Paper | 28 October 2013

Atomic force microscopy study of photoresist sidewall smoothing and line edge roughness transfer during gate patterning

Marc Fouchier, Erwine Pargon

JM3, Vol. 12, Issue 04, 041308, (October 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041308

KEYWORDS: Line edge roughness, Atomic force microscopy, Etching, Plasma, Silicon, Critical dimension metrology, Photoresist materials, Plasma treatment, Plasma etching, Vacuum ultraviolet

Read Abstract +

SPIE Journal Paper | 25 September 2013

Plasma treatments to improve line-width roughness during gate patterning

Laurent Azarnouche, Erwine Pargon, Kevin Menguelti, Marc Fouchier, Melisa Brihoum, Raphael Ramos, Olivier Joubert, Pascal Gouraud, Christophe Verove

JM3, Vol. 12, Issue 04, 041304, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041304

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Optical lithography, Etching, Photoresist materials, Carbon, Plasma etching, Argon

Read Abstract +

Proceedings Article | 29 March 2013 Paper

A new method based on AFM for the study of photoresist sidewall smoothening and LER transfer during gate patterning

Marc Fouchier, Erwine Pargon, Benjamin Bardet

Proceedings Volume 8685, 86850B (2013) https://doi.org/10.1117/12.2011554

KEYWORDS: Line edge roughness, Etching, Plasma, Atomic force microscopy, Plasma treatment, Silicon, Critical dimension metrology, Vacuum ultraviolet, System on a chip, Photoresist materials

Read Abstract +

Proceedings Article | 17 March 2012 Paper

Plasma treatment to improve linewidth roughness during gate patterning

L. Azarnouche, E. Pargon, K. Menguelti, M. Fouchier, M. Brihoum, R. Ramos, O. Joubert, P. Gouraud, C. Verove

Proceedings Volume 8328, 83280H (2012) https://doi.org/10.1117/12.920314

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Etching, Photoresist materials, Carbon, Optical lithography, Plasma etching, Fractal analysis

Read Abstract +

Proceedings Article | 24 April 2003 Paper

Fabrication of conductive atomic force microscope probes and their evaluation for carrier mapping

Marc Fouchier, Pierre Eyben, David Alvarez, Natasja Duhayon, MingWei Xu, Sywert Brongersma, Judit Lisoni, Wilfried Vandervorst

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.498164

KEYWORDS: Tin, Silicon, Metals, Particle filters, Oxides, Diamond, Resistance, Nickel, Microscopy, Oxidation

Read Abstract +

Proceedings Article | 8 October 2001 Paper

Automated assembly of holder chips to AFM probes

Gunther Reinhart, Dirk Jacob, Marc Fouchier

Proceedings Volume 4568, (2001) https://doi.org/10.1117/12.444140

KEYWORDS: Sensors, Semiconducting wafers, Atomic force microscopy, Silicon, Manufacturing, Adhesives, Sensor technology, Diamond, Control systems, Nickel

Read Abstract +

Showing 5 of 7 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years