Mr. Hua-Tai Lin Profile

Hua-Tai Lin

Deputy Director at Taiwan Semiconductor Manufacturing Co Ltd

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Publications (9)

Proceedings Article | 8 March 2016 Paper

A novel method to quantify the complex mask patterns

Yu-Lung Tung, Che-Yuan Sun, Shu-Chuan Chuang, Woei-Bin Luo, Jia-Rui Hu, Hsiang-Lin Chen, Hua-Tai Lin, Chih-Ming Ke, Tsai-Sheng Gau

Proceedings Volume 9778, 97783S (2016) https://doi.org/10.1117/12.2218346

KEYWORDS: Photomasks, Optical lithography, Critical dimension metrology, Optical proximity correction, Image processing, Process control, 193nm lithography, Lithography, Semiconductors, Performance modeling, Electron beam lithography, Mask making, Metrology

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Proceedings Article | 18 March 2015 Paper

Impacts of post OPC shapes on pattern

W. H. Chu, Y. T. Tsai, S. Y. Huang, C. C. Kuo, H. T. Lin

Proceedings Volume 9426, 94261S (2015) https://doi.org/10.1117/12.2087531

KEYWORDS: Optical proximity correction, Photomasks, Diffraction, Shape analysis, Spatial frequencies, Resolution enhancement technologies, Head, Optical lithography, Semiconducting wafers, Lithographic illumination

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Proceedings Article | 16 March 2009 Paper

OPC segmentation: dilemma between degree-of-freedom and stability with some relieves

Y. P. Tang, J. H. Feng, M. H. Chih, C. K. Tsai, W. C. Huang, C. C. Kuo, R. G. Liu, H. T. Lin, Y. C. Ku

Proceedings Volume 7274, 72742G (2009) https://doi.org/10.1117/12.814907

KEYWORDS: Optical proximity correction, Image segmentation, Optical lithography, Resolution enhancement technologies, Lithographic illumination, Detection and tracking algorithms, Neodymium, Semiconductor manufacturing, Immersion lithography, Photomasks

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Proceedings Article | 7 March 2008 Paper

Pellicle effect on OPC modeling

Boren Luo, Chi-Kang Chang, W. Wang, W. Huang, Timothy Wu, C. Lai, R. Liu, H. Lin, K. Chen, Y. Ku

Proceedings Volume 6924, 69243T (2008) https://doi.org/10.1117/12.775419

KEYWORDS: Pellicles, Optical proximity correction, Photomasks, Data modeling, Polarization, Immersion lithography, Projection systems, Diffraction, Signal attenuation, Critical dimension metrology

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Proceedings Article | 20 March 2006 Paper

Intelligent model-based OPC

W.C. Huang, C.M. Lai, B. Luo, C.K. Tsai, M.H. Chih, C.W. Lai, C.C. Kuo, R.G. Liu, H.T. Lin

Proceedings Volume 6154, 615436 (2006) https://doi.org/10.1117/12.657792

KEYWORDS: Optical proximity correction, Lithography, Genetic algorithms, Model-based design, Optimization (mathematics), Artificial neural networks, Image segmentation, Neural networks, Semiconducting wafers, Systems modeling

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Optical proximity correction is the technique of pre-distorting mask layouts so that the printed patterns are as close to the desired shapes as possible. For model-based optical proximity correction, a lithographic model to predict the edge position (contour) of patterns on the wafer after lithographic processing is needed. Generally, segmentation of edges is performed prior to the correction. Pattern edges are dissected into several small segments with corresponding target points. During the correction, the edges are moved back and forth from the initial drawn position, assisted by the lithographic model, to finally settle on the proper positions. When the correction converges, the intensity predicted by the model in every target points hits the model-specific threshold value. Several iterations are required to achieve the convergence and the computation time increases with the increase of the required iterations. An artificial neural network is an information-processing paradigm inspired by biological nervous systems, such as how the brain processes information. It is composed of a large number of highly interconnected processing elements (neurons) working in unison to solve specific problems. A neural network can be a powerful data-modeling tool that is able to capture and represent complex input/output relationships. The network can accurately predict the behavior of a system via the learning procedure. A radial basis function network, a variant of artificial neural network, is an efficient function approximator. In this paper, a radial basis function network was used to build a mapping from the segment characteristics to the edge shift from the drawn position. This network can provide a good initial guess for each segment that OPC has carried out. The good initial guess reduces the required iterations. Consequently, cycle time can be shortened effectively. The optimization of the radial basis function network for this system was practiced by genetic algorithm, which is an artificially intelligent optimization method with a high probability to obtain global optimization. From preliminary results, the required iterations were reduced from 5 to 2 for a simple dumbbell-shape layout.

Proceedings Article | 12 May 2005 Paper

OPC modeling by genetic algorithm

W. Huang, C. Lai, B. Luo, C. Tsai, C. Tsay, C. Kuo, R. Liu, H. Lin, B. Lin

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602096

KEYWORDS: Optical proximity correction, Lithography, Wafer-level optics, Genetic algorithms, Model-based design, Data modeling, Optimization (mathematics), Optical lithography, Photomasks, Semiconducting wafers

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Proceedings Article | 24 May 2004 Paper

90-nm lithography process characterization using ODP scatterometry technology

Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Yu-Jun Chou, Jeng-Horng Chen, Bih-Huey Lee, Hong-Yuan Chu, Hua-Tai Lin, Tsai-Sheng Gau, Chih-Hsiang Lin, Yao-Ching Ku, Burn Lin, Jacky Huang, J. Hsu, Victor Liu, Dave Hetzer, Lip Yap, Wenge Yang, Kaoru Araki

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536123

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Transmission electron microscopy, Metrology, Scatterometry, Finite element methods, Process control, Lithography, Wafer-level optics

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Proceedings Article | 14 September 2001 Paper

Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths

Ying-Ying Wang, Hua Tai Lin, Shinn Sheng Yu, Chun-Kuang Chen, Yao Ching Ku, Anthony Yen, Burn Lin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435728

KEYWORDS: Atrial fibrillation, Optical proximity correction, Lithography, Photomasks, Lithographic illumination, Photoresist materials, Optical lithography, Logic devices, Optics manufacturing, SRAF

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Proceedings Article | 5 July 2000 Paper

0.13-um optical lithography for random logic devices using 248-nm attenuated phase-shifting masks

Yung-Tin Chen, Chia-Hui Lin, Hua Tai Lin, Hung-Chang Hsieh, Shinn Sheng Yu, Anthony Yen

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388927

KEYWORDS: Optical proximity correction, Atrial fibrillation, Photomasks, Line edge roughness, Phase shifts, Electroluminescence, Optical lithography, Logic devices, Scanners, Lithography

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Showing 5 of 9 publications

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