Dr. Younghoon Sohn Profile

Dr. Younghoon Sohn

VP of Technology (Master) at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Conference Program Committee | Author

Younghoon Sohn, Ph.D.

Dr. Sohn is the VP of Technology(Master) in Samsung Electronics' Semiconductor Memory Division. He leads the Advanced Metrology & Inspection Tech team to develop new technologies and apply them to High Volume Manufacturing (HVM). Since joining Samsung Electronics in 2006, he has been involved in the development of advanced MI technology projects from solution discovery to implementing production system. He holds more than 50 patents in the field of semiconductor MI.

Dr. Sohn received his Ph.D. from Northwestern University (Mechanical engineering) in 2005. The Thesis title was “Near-field photo-acoustic material characterization using scanning laser source and micro-fabricated ultrasound receiver”.”

Proceedings Article | 10 April 2024 Presentation + Paper

3D gray level index for pattern depth monitoring based on SEM Image

Hyeon Bo Shim, Jaehyung Ahn, Inseok Park, Souk Kim, Younghoon Sohn

Proceedings Volume 12955, 1295511 (2024) https://doi.org/10.1117/12.3010209

KEYWORDS: Scanning electron microscopy, 3D image processing, 3D metrology, Design rules, Critical dimension metrology, Monte Carlo methods, Metrology, Manufacturing

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Proceedings Article | 27 April 2023 Presentation + Paper

Novel depth quantification technique of buried defect for development of non-destructive optical inspection

Min Ho Rim, Jongsok Yi, Jungtaek Lim, Souk Kim, Younghoon Sohn

Proceedings Volume 12496, 124961R (2023) https://doi.org/10.1117/12.2656994

KEYWORDS: Optical inspection, Signal to noise ratio, Nondestructive evaluation, Visualization, Inspection, Geometrical optics, Semiconducting wafers, Light sources and illumination, Image analysis, Design rules

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Proceedings Article | 27 April 2023 Presentation + Paper

Semiconductor device metrology for detecting defective chip due to high aspect ratio-based structures using hyperspectral imaging and deep learning

Sunhong Jun, Wonjun Choi, DongHoon Kim, Hayan Park, Dongmin Kyeon, Kyounghwan Lee, Yong-Ju Jeon, Chaemin Lee, Kwangchul Kim, Jeongsu Ha, Sungyoon Ryu, Younghoon Son, Yongdeok Jung

Proceedings Volume 12496, 124961F (2023) https://doi.org/10.1117/12.2657062

KEYWORDS: Intelligence systems, Semiconducting wafers, Deep learning, 3D metrology, Hyperspectral imaging, Etching, Metrology, 3D modeling, Imaging spectroscopy, Defect detection

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Proceedings Article | 27 April 2023 Presentation + Paper

Detection of defective areas and hidden weak patterns in the wafer using massive measurement data

DongHoon Kim, Sungyoon Ryu, Sunhong Jun, Heeyoon Han, Wonjun Choi, Yong-Ju Jeon, Hyun Lee, Souk Kim, Younghoon Sohn

Proceedings Volume 12496, 124961Y (2023) https://doi.org/10.1117/12.2657064

KEYWORDS: Semiconducting wafers, Signal detection, Defect detection, Metrology, Signal processing, Semiconductors, Semiconductor manufacturing, Fourier transforms, Fabrication

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Proceedings Article | 27 April 2023 Poster + Paper

Local depth monitoring using scanning electron microscopy and its verification using atomic force microscopy

Inseok Park, JaeHyung Ahn, Donghyun Lee, Souk Kim, Minho Rim, Younghoon Sohn

Proceedings Volume 12496, 124962L (2023) https://doi.org/10.1117/12.2657848

KEYWORDS: Scanning electron microscopy, Atomic force microscopy, Transmission electron microscopy, Semiconducting wafers, Reliability, Metrology, Signal detection, Semiconductors, Optical transmission, Optical sensing

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Proceedings Article | 27 April 2023 Presentation + Paper

A study on defect signal improvement using multi-scan optic patch images and new detection algorithm

Sungyoon Ryu, Seunghyeok Son, Chan-Gi Jeon, Sujin Lee, Minho Rim, Yusin Yang, Younghoon Sohn

Proceedings Volume 12496, 124960Y (2023) https://doi.org/10.1117/12.2657845

KEYWORDS: Signal to noise ratio, Defect detection, Inspection, Optical inspection, Semiconducting wafers, Signal detection, Semiconductors, Detection and tracking algorithms, Wafer-level optics, Reconstruction algorithms

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Proceedings Article | 27 April 2023 Poster + Paper

3D measurement using SEM technology

Younghoon Sohn, JaeHyung Ahn, Inseok Park, Souk Kim, DongHoon Kim

Proceedings Volume 12496, 124963M (2023) https://doi.org/10.1117/12.2657478

KEYWORDS: Single crystal X-ray diffraction, Scanning electron microscopy, Critical dimension metrology, 3D metrology, Electron beams, Semiconducting wafers, Etching, Cadmium, Optical testing, Optical limiting

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Proceedings Article | 26 May 2022 Presentation + Paper

Diversifying the role of MI in semiconductor manufacturing through new technologies and innovations

Younghoon Sohn, Sungyoon Ryu, Jaehyung Ahn, Souk Kim

Proceedings Volume 12053, 120530X (2022) https://doi.org/10.1117/12.2612710

KEYWORDS: Semiconductors, Inspection, Data processing, Semiconductor manufacturing, Scanning electron microscopy, New and emerging technologies, High volume manufacturing

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Proceedings Article | 26 May 2022 Poster + Presentation + Paper

Improved fab-out EDS prediction of memory device using effective accuracy equation

Heeyoon Han, Wansik Nam, Hyeungcheol Mun, Sangbong Lee, Sungyoon Ryu, Younghoon Sohn

Proceedings Volume 12053, 120531S (2022) https://doi.org/10.1117/12.2613619

KEYWORDS: Binary data, Metrology, Distortion, Semiconducting wafers, Semiconductors, Manufacturing, Data conversion, Data modeling, Yield improvement, Optics manufacturing

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Proceedings Article | 26 May 2022 Poster + Presentation + Paper

Depth measurement using high-voltage SEM that changes the inclination of the incident beam

JaeHyung Ahn, KwangEun Kim, Souk Kim, Younghoon Sohn

Proceedings Volume 12053, 1205324 (2022) https://doi.org/10.1117/12.2614186

KEYWORDS: Scanning electron microscopy, Tungsten, Electron microscopy, Etching, 3D metrology, Manufacturing, Error analysis

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Proceedings Article | 26 May 2022 Presentation + Paper

A study on the detection and monitoring of weak areas in wafer using massive 2D and 3D measurement data

Sungyoon Ryu, Dong Hoon Kim, Sunhong Jun, Suho Ryu, JaeHyung Ahn, Hyun Lee, Kwang-Eun Kim, Yusin Yang, Younghoon Sohn

Proceedings Volume 12053, 1205302 (2022) https://doi.org/10.1117/12.2613631

KEYWORDS: Semiconducting wafers, 3D metrology, Inspection, Metrology, Ellipsometry, 3D modeling, Detection and tracking algorithms, Wafer-level optics, Semiconductors, Manufacturing

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Proceedings Article | 13 March 2018 Presentation + Paper

Spectroscopic vector analysis for fast pattern quality monitoring

Younghoon Sohn, Sungyoon Ryu, Chihoon Lee, Yusin Yang

Proceedings Volume 10585, 105851J (2018) https://doi.org/10.1117/12.2296448

KEYWORDS: Critical dimension metrology, Phase shifts, Semiconductors, Spectroscopic ellipsometry, Scanning probe microscopy, Semiconducting wafers, Data modeling, Spectroscopes, Time metrology, Scanning electron microscopy

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Proceedings Article | 28 March 2017 Presentation + Paper

A new method for wafer quality monitoring using semiconductor process big data

Younghoon Sohn, Hyun Lee, Yusin Yang, Chungsam Jun

Proceedings Volume 10145, 101450T (2017) https://doi.org/10.1117/12.2256435

KEYWORDS: Metrology, Data processing, Semiconductors, Failure analysis, Semiconducting wafers, Analytical research, Statistical analysis, Lithography, Wafer inspection, Data modeling, Algorithm development, Coating, Sensors

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Proceedings Article | 9 May 2005 Paper

A scanning laser source and a microcantilever ultrasound receiver for detection of surface flaws in microdevices

Younghoon Sohn, Sridhar Krishnaswamy

Proceedings Volume 5768, (2005) https://doi.org/10.1117/12.598522

KEYWORDS: Ultrasonography, Near field, Receivers, Laser sintering, Silicon, Ultrasonics, Laser sources, Laser scattering, Scattering, Reactive ion etching

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In recent work at Northwestern University, we have shown that near-field scattering of ultrasound generated by a Scanning Laser Source (SLS) can be used to effectively identify surface flaws in macroscale structures. In past work, the laser ultrasound source was in the near-field of a scatterer and a piezoelectric detector was used to measure the ultrasound in the far field. It was observed that distinct variations are observed in the far-field signals as the SLS scans past surface-breaking flaws. These changes were attributed to the near-field scatterer redirecting parts of the ultrasonic beam (which might otherwise have gone into the bulk of the object) towards the far-field detector. We now propose an extension of the SLS approach to map defects in microdevices by bringing both the generator and the receiver to the near-field scattering region of the defects. For the purpose of near-field ultrasound measurement, the receiving transducer has to be made very small as well. To facilitate this, silicon microcantilever probes are fabricated and their acoustical characteristics are first investigated. Silicon cantilevers with tip and chip body are fabricated using isotropic reactive ion etching and anisotropic KOH etching. To characterize the free cantilever vibration, the chip body with the microcantilever is excited by an ultrasonic transducer and a Michelson interferometer is used to monitor the cantilever motion. The fundamental frequency of the microcantilever is measured and compared with analytically calculated fundamental frequency assuming the cross sections of the cantilevers are rectangular. Next, the performance of the fabricated microcantilevers as ultrasound detectors is investigated. The microcantilever is used essentially as a profilometer by contacting it to the specimen surface. Surface and bulk acoustic waves are generated with specific narrowband frequencies and the surface ultrasonic displacements are detected using the microcantilever probe. Next, broadband ultrasound is generated by a laser source and the resulting surface acoustic displacements are monitored using the microcantilever probe in the near-field of the source. Finally, both the laser-generated ultrasonic source and the microcantilever probe are used to monitor near-field scattering by a surface-breaking defect.

Showing 5 of 14 publications

Conference Committee Involvement (2)

Metrology, Inspection, and Process Control XXXIX

23 February 2025 | San Jose, California, United States

Metrology, Inspection, and Process Control XXXVIII

26 February 2024 | San Jose, California, United States

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