Prof. Satoshi Kamiyama Profile

Prof. Satoshi Kamiyama

Professor at Meijo Univ

SPIE Involvement:

Author

Publications (49)

Proceedings Article | 13 March 2024 Presentation

Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs

Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Proceedings Volume PC12906, PC1290605 (2024) https://doi.org/10.1117/12.3001286

KEYWORDS: Light emitting diodes, Fabrication, Nanowires, Gallium nitride, Vapor phase epitaxy, Pulsed laser operation, Polarization, Optoelectronic devices, Indium nitride, Emission wavelengths

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Proceedings Article | 9 March 2024 Presentation

Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12886, PC1288606 (2024) https://doi.org/10.1117/12.3005198

KEYWORDS: Semiconductor lasers, Sapphire, Aluminum gallium nitride, Laser damage threshold, Waveguides, Refractive index, Pulsed laser operation, Laser applications, Design and modelling

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Proceedings Article | 9 March 2024 Presentation

In-situ structural controls during the GaN-based VCSEL growths

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Proceedings Volume PC12886, PC128860T (2024) https://doi.org/10.1117/12.3000668

KEYWORDS: Vertical cavity surface emitting lasers, Control systems, Gallium nitride, Semiconducting wafers, Indium nitride, Temperature metrology, Point-of-care devices, Visible light communication, Telecommunications, Retinal scanning

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Proceedings Article | 8 March 2024 Presentation + Paper

InGaN photovoltaic cells for applications in laser power beaming

M. Koga, S. Shibui, R. Takahashi, J. Suzuki, R. Aoyama, T. Noguchi, S. Hayashi, T. Fujisawa, S. Ii, R. Watanabe, T. Fukamachi, K. Naniwae, M. Miyoshi, T. Takeuchi, S. Kamiyama, S. Uchida

Proceedings Volume 12886, 1288607 (2024) https://doi.org/10.1117/12.3001576

KEYWORDS: Indium gallium nitride, Solar cells, Laser irradiation, Resistance, Temperature metrology, Laser applications, Wireless energy transfer, Sapphire, Retina, Power supplies

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Proceedings Article | 5 October 2023 Presentation

UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12652, PC1265208 (2023) https://doi.org/10.1117/12.2677284

KEYWORDS: Semiconductor lasers, Aluminum gallium nitride, Ultraviolet radiation, Solid state lasers, Power consumption, Optical resonators, Noble gases, Gas lasers, Doping, Crystals

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Proceedings Article | 21 March 2023 Presentation

Progress in UV-B laser diodes fabricated on lattice relaxed AlGaN

Motoaki Iwaya, Ryosuke Kondo, Ryota Hasegawa, Ayumu Yabutani, Eri Matsubara, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646560

KEYWORDS: Semiconductor lasers, Quantum efficiency, External quantum efficiency, Pulsed laser operation, Polarization, Optical resonators, Mirrors, Medical devices, Laser development, Laser damage threshold

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Proceedings Article | 21 March 2023 Presentation

Electrical characteristics of highly mg-doped AlGaN contact layers for duv leds

Hayata Takahata, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Hianori Ishiguro, Tomoaki Kachi, Rie Iwatsuki, Yoshiki Saito, Koji Okuno, Kengo Nagata

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649923

KEYWORDS: Light emitting diodes, Deep ultraviolet, Resistance, Aluminum nitride, Gallium nitride

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Proceedings Article | 21 March 2023 Presentation

Sputtering growth of n++-GaN shell in the tunnel junction on core-shell GaInN/GaN multi-quantum shell/nanowires

Yukimi Jinno, Sae Katsuro, Shiori Yamamura, Nanami Nakayama, Shiori Ii, Yuki Yamanaka, Mizuki Takahashi, Soma Inaba, Ayaka Shima, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646907

KEYWORDS: Sputter deposition, Nanowires, Gallium nitride, Silicon, Vapor phase epitaxy, Optoelectronic devices, Magnesium, Luminous efficiency, Hydrogen, Doping

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Proceedings Article | 21 March 2023 Presentation

MOVPE-growth of conductive AlInN/GaN DBRs towards GaN-based VCSELs

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2647715

KEYWORDS: Vertical cavity surface emitting lasers, Interfaces, Gallium nitride, Reflectors, Reflectivity, Hydrogen

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Proceedings Article | 17 March 2023 Presentation

Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)

Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiro Yamaguchi

Proceedings Volume PC12441, PC124410A (2023) https://doi.org/10.1117/12.2646756

KEYWORDS: Ultraviolet radiation, Sapphire, Light emitting diodes, Semiconductor lasers, Ultraviolet light emitting diodes, Semiconductors, Semiconducting wafers, Luminescence, High power lasers, Deep ultraviolet

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Proceedings Article | 17 March 2023 Presentation

Development of AlGaN-based laser diodes in the UV-A to UV-B regions

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12440, PC1244005 (2023) https://doi.org/10.1117/12.2647243

KEYWORDS: Semiconductor lasers, Laser development, Ultraviolet radiation, Ultraviolet light emitting diodes, Patents, Optical resonators, Medicine, Laser crystals, Laser applications, Doping

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Proceedings Article | 15 March 2023 Presentation + Paper

Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Sae Katsuro, Weifang Lu, Nanami Nakayama, Soma Inaba, Yukimi Jinno, Shiori Yamamura, Ayaka Shima, Shiori Li, Mizuki Takahashi, Yuki Yamanaka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama

Proceedings Volume 12421, 124210N (2023) https://doi.org/10.1117/12.2646906

KEYWORDS: Nanowires, Light emitting diodes, Electron beam lithography, Electroluminescence, Scanning electron microscopy, Luminescence, Silica, Film thickness, Dry etching, Scanning transmission electron microscopy

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Proceedings Article | 5 March 2022 Presentation

MOVPE-grown GaN-based tunnel junctions and optoelectronic devices

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Proceedings Volume PC12001, PC120010I (2022) https://doi.org/10.1117/12.2608422

KEYWORDS: Optoelectronic devices, Magnesium, Vertical cavity surface emitting lasers, Silicon, Semiconductor lasers, Gallium nitride, Laser damage threshold

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Proceedings Article | 5 March 2022 Poster + Presentation

Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs

Sae Katsuro, Weifang Lu, Naoki Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, Shiori Yamamura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama

Proceedings Volume PC12001, PC120011D (2022) https://doi.org/10.1117/12.2608186

KEYWORDS: Light emitting diodes, Nanowires, Etching, Luminous efficiency, Vapor phase epitaxy, Silica, Scanning electron microscopy, Polarization, Metals, Luminescence

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Proceedings Article | 5 March 2022 Poster + Presentation

Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires

Yukimi Jinno, Renji Okuda, Naoki Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, Shiori Yamamura, Sae Katsuro, Nanami Nakayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Proceedings Volume PC12001, PC120011E (2022) https://doi.org/10.1117/12.2608187

KEYWORDS: Optoelectronic devices, Nanostructures, Magnesium, Luminous efficiency, Sputter deposition, Nanowires, Gallium nitride, Crystals, Vapor phase epitaxy, Silicon

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Proceedings Article | 5 March 2022 Presentation

Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices

Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Proceedings Volume PC12001, PC1200109 (2022) https://doi.org/10.1117/12.2608402

KEYWORDS: Gallium nitride, Magnesium, Doping, Vapor phase epitaxy, Tin, Resistance, Oxides, Nanowires, Mass spectrometry, Ions

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Proceedings Article | 11 March 2021 Presentation + Paper

Device fabrication for multiple quantum shell nanowires based laser diodes

Renji Okuda, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Kazuma Ito, Kazuyoshi Iida, Masaki Ohya, Koji Okuno, Koichi Mizutani, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11686, 116861A (2021) https://doi.org/10.1117/12.2578128

KEYWORDS: Nanowires, Semiconductor lasers, Wet etching, Plasma etching, Metalorganic chemical vapor deposition, Plasma, Optoelectronic devices, Nanolithography, Mirrors, Gallium nitride

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Proceedings Article | 6 March 2021 Poster + Presentation

Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction

Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Kazuma Ito, Renji Okuda, Kazuyoshi Iida, Masaki Ohya, Koji Okuno, Koichi Mizutani, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11686, 116862L (2021) https://doi.org/10.1117/12.2578133

KEYWORDS: Nanowires, Crystals, Scanning electron microscopy, Quantum efficiency, Light emitting diodes, Vapor phase epitaxy, Tin, Silica, Semiconductor lasers, Photomasks

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Proceedings Article | 5 March 2021 Presentation + Paper

High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth

Yoma Yamane, Weifang Lu, Kosuke Yanai, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11706, 117060W (2021) https://doi.org/10.1117/12.2577458

KEYWORDS: Silicon carbide, Doping, Nitrogen, Boron, Sodium, Protactinium, Neodymium, Luminous efficiency, Internal quantum efficiency

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Proceedings Article | 5 March 2021 Presentation

Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces

Kosuke Yanai, Weifang Lu, Yoma Yamane, Satoshi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11706, 117060X (2021) https://doi.org/10.1117/12.2577428

KEYWORDS: Silicon carbide, Oxidation, Luminescence, Light emitting diodes, Scanning electron microscopy, Nitrogen, Boron

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Proceedings Article | 5 March 2021 Presentation

Developments of GaN-based VCSELs with epitaxially grown DBRs

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11686, 116860G (2021) https://doi.org/10.1117/12.2576494

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Data modeling, Continuous wave operation, Indium nitride, Gallium nitride, Aluminum

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Proceedings Article | 5 March 2021 Presentation

Improvement of device performance in UV-B laser diodes

Motoaki Iwaya, Shunya Tanaka, Moe Shimokawa, Yuya Ogino, Tomoya Omori, Kazuki Yamada, Sayaka Ishizuka, Shohei Teramura, Kosuke Sato, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hideto Miyake

Proceedings Volume 11686, 116860Q (2021) https://doi.org/10.1117/12.2575973

KEYWORDS: Semiconductor lasers, Ultraviolet radiation, Applied physics, Polarization, Doping, Continuous wave operation

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Proceedings Article | 5 March 2021 Presentation

Emission wavelength control of GaInN/GaN multi-quantum shells/nanowires grown by metalorganic vapor phase epitaxy

Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11686, 116861L (2021) https://doi.org/10.1117/12.2578127

KEYWORDS: Light emitting diodes, Electron microscopes, Electron beam lithography, Vapor phase epitaxy, Nanowires, Scanning electron microscopy, Crystals, Quantum wells, Luminous efficiency

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Proceedings Article | 17 March 2020 Presentation

Crystal growth and optical property in core-shell structure consisting of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) (Conference Presentation)

Satoshi Kamiyama, Lu Weifang, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 11302, 113020E (2020) https://doi.org/10.1117/12.2542224

KEYWORDS: Crystals, Nanowires, Optical properties, Gallium nitride, Crystal optics, Silicon, Tolerancing, Doping

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Proceedings Article | 5 March 2019 Presentation

White LED in combination with bulk and porous fluorescent SiC (Conference Presentation)

Satoshi Kamiyama, Atsushi Suzuki, Weifang Lu, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki

Proceedings Volume 10918, 1091820 (2019) https://doi.org/10.1117/12.2511208

KEYWORDS: Light emitting diodes, Silicon carbide, Near ultraviolet, Blue light emitting diodes, Optical components, Oxidation, Optical properties

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Proceedings Article | 14 March 2018 Presentation

Improved crystalline quality of nonpolar a-plane GaN grown on r-plane patterned sapphire substrate (Conference Presentation)

Shunya Otsuki, Daiki Jinno, Hisayoshi Daicho, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Proceedings Volume 10532, 105320E (2018) https://doi.org/10.1117/12.2288899

KEYWORDS: Gallium nitride, Crystals, Patterned sapphire substrate, Sapphire, Aluminum nitride, Electron microscopes, Light emitting diodes, Crystallography, Vapor phase epitaxy, X-rays

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Proceedings Article | 2 January 2018 Paper

Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution

Y. Iwasa, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki

Proceedings Volume 10456, 1045668 (2018) https://doi.org/10.1117/12.2283026

KEYWORDS: Silicon carbide, Oxidation, Potassium, Chemical reactions, Light emitting diodes, Scanning electron microscopy, Blue light emitting diodes, Crystals, Optical properties, Electronics

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Proceedings Article | 19 April 2017 Presentation

Demonstration of nitride-based lasers excited by electron beam (Conference Presentation)

Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto

Proceedings Volume 10104, 101041I (2017) https://doi.org/10.1117/12.2254255

KEYWORDS: Laser optics, Semiconductor lasers, Electron beams, Semiconductors, Ultraviolet radiation, Aluminum nitride, Optical pumping, Laser sources, Biology, Photonics

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Proceedings Article | 8 March 2014 Paper

Homoepitaxial growth of AlN layers using by metalorganic vapor phase epitaxy on freestanding AlN substrate

Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Proceedings Volume 8986, 898607 (2014) https://doi.org/10.1117/12.2038848

KEYWORDS: Aluminum nitride, Atomic force microscopy, Vapor phase epitaxy, Crystals, Crystal optics, Temperature metrology, Chemical mechanical planarization, Aluminum, X-ray optics, X-ray diffraction

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Proceedings Article | 4 March 2013 Paper

Fabrication and characterization of nitride-based blue light-emitting diodes on moth-eye patterned sapphire substrate (MPSS)

T. Tsuchiya, S. Umeda, Mihoko Sowa, T. Kondo, T. Kitano, M. Mori, A. Suzuki, K. Naniwae, H. Sekine, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

Proceedings Volume 8641, 86410J (2013) https://doi.org/10.1117/12.2003527

KEYWORDS: Light emitting diodes, Sapphire, Gallium nitride, Etching, Antireflective coatings, Patterned sapphire substrate, Blue light emitting diodes, Dry etching, External quantum efficiency, Wet etching

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Proceedings Article | 4 March 2013 Paper

Introduction of the moth-eye patterned sapphire substrate technology for cost-effective high-performance LEDs

K. Naniwae, M. Mori, T. Kondo, A. Suzuki, T. Kitano, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki

Proceedings Volume 8641, 86410G (2013) https://doi.org/10.1117/12.2002755

KEYWORDS: Light emitting diodes, Gallium nitride, Interfaces, Transmittance, Patterned sapphire substrate, Antireflective coatings, Transmission electron microscopy, Sapphire, Diffraction, Semiconducting wafers

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Proceedings Article | 4 March 2013 Paper

Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes

S. Mizutani, S. Nakashima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, T. Kondo, F. Teramae, A. Suzuki, T. Kitano, M. Mori, M. Matsubara

Proceedings Volume 8641, 86411Y (2013) https://doi.org/10.1117/12.2003536

KEYWORDS: Light emitting diodes, Antireflective coatings, Annealing, Electrodes, Oxides, Argon, Resistance, Sputter deposition, Blue light emitting diodes, Nanostructures

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Proceedings Article | 28 February 2012 Paper

Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices

M. Mori, S. Yamamoto, Y. Kuwahara, T. Fujii, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano

Proceedings Volume 8262, 82620Z (2012) https://doi.org/10.1117/12.908226

KEYWORDS: Sun, Solar cells, Superlattices, Remote sensing, Gallium nitride, Crystals, Silicon, Resistance, Measurement devices, Indium nitride

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Proceedings Article | 4 March 2011 Paper

Fabrication of high-efficiency LED using moth-eye structure

H. Sakurai, T. Kondo, A. Suzuki, T. Kitano, M. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

Proceedings Volume 7939, 79391V (2011) https://doi.org/10.1117/12.875198

KEYWORDS: Antireflective coatings, Light emitting diodes, Sapphire, Blue light emitting diodes, Interfaces, Gallium nitride, Optical lithography, Lithography, Optical spheres, Reflection

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Proceedings Article | 17 March 2010 Paper

Reduction in operating voltage of UV laser diode

Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan

Proceedings Volume 7602, 760223 (2010) https://doi.org/10.1117/12.843910

KEYWORDS: Ultraviolet radiation, Annealing, Resistance, Electrodes, Semiconductor lasers, Sapphire, Aluminum nitride, Gallium nitride, Reactive ion etching, Optical lithography

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Proceedings Article | 12 March 2010 Paper

Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure

T. Kondo, A. Suzuki, F. Teramae, T. Kitano, Y. Kaneko, R. Kawai, K. Teshima, S. Maeda, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Proceedings Volume 7602, 76021M (2010) https://doi.org/10.1117/12.841518

KEYWORDS: Antireflective coatings, Light emitting diodes, Blue light emitting diodes, Sapphire, Silicon carbide, Charged-particle lithography, Reflection, Electron beam lithography, Interfaces, External quantum efficiency

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Proceedings Article | 12 February 2010 Paper

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Proceedings Volume 7617, 761702 (2010) https://doi.org/10.1117/12.848616

KEYWORDS: Switching, Focus stacking software, Vapor phase epitaxy, Light emitting diodes, Thermodynamics, Solids, External quantum efficiency, Epitaxy, Gallium nitride, Blue light emitting diodes

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Proceedings Article | 17 February 2009 Paper

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Proceedings Volume 7216, 721628 (2009) https://doi.org/10.1117/12.811348

KEYWORDS: Antireflective coatings, Light emitting diodes, Silicon carbide, Fabrication, Projection lithography, Blue light emitting diodes, Electron beam lithography, Photomasks, Transparency, Charged-particle lithography

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Proceedings Article | 17 February 2009 Paper

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

H, Amano, K. Nagamatsu, K. Takeda, T. Mori, H. Tsuzuki, M. Iwaya, S. Kamiyama, I. Akasaki

Proceedings Volume 7216, 72161B (2009) https://doi.org/10.1117/12.808381

KEYWORDS: Aluminum nitride, Ultraviolet radiation, Magnesium, Mirrors, Gallium nitride, Dielectrics, Dielectric mirrors, Sapphire, Multilayers, Semiconductor lasers

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Proceedings Article | 28 February 2008 Paper

Photoluminescence study of near-surface GaN/AlN superlattices

P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6894, 68940G (2008) https://doi.org/10.1117/12.759452

KEYWORDS: Stereolithography, Laser sintering, Gallium nitride, Aluminum nitride, Interfaces, Superlattices, Luminescence, Metalorganic chemical vapor deposition, Quantum wells, Field effect transistors

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Proceedings Article | 22 February 2008 Paper

Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6889, 688904 (2008) https://doi.org/10.1117/12.784113

KEYWORDS: Zinc oxide, Indium gallium nitride, Atomic force microscopy, Crystals, Vapor phase epitaxy, Temperature metrology, Annealing, Indium, Gallium nitride, Sapphire

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Proceedings Article | 6 February 2007 Paper

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6468, 64680S (2007) https://doi.org/10.1117/12.717182

KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Epitaxial lateral overgrowth, Silicon carbide, Aluminum nitride, Scanning electron microscopy, Transmission electron microscopy, Fabrication, Surface roughness

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Proceedings Article | 6 February 2007 Paper

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh

Proceedings Volume 6468, 64680R (2007) https://doi.org/10.1117/12.717174

KEYWORDS: Gallium, Aluminum nitride, Aluminum, Gallium nitride, Epitaxial lateral overgrowth, Light emitting diodes, Ultraviolet light emitting diodes, Computer simulations, Ultraviolet radiation, Sapphire

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Proceedings Article | 28 February 2006 Paper

Simulation and fabrication of nitride-based moth-eye light-emitting diodes

M. Nakashima, H. Kasugai, A. Deguchi, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6115, 61151Y (2006) https://doi.org/10.1117/12.661181

KEYWORDS: Eye, Light emitting diodes, Silicon carbide, Lithography, Electron beam lithography, Antireflective coatings, Laser applications, External quantum efficiency, Device simulation, LED lighting

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Proceedings Article | 28 April 2005 Paper

Physics and simulation of group-III-nitride-based moth-eye LEDs

M. Iwaya, H. Kasugai, T. Kawashima, K. Iida, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601959

KEYWORDS: Antireflective coatings, Light emitting diodes, Silicon carbide, Internal quantum efficiency, Blue light emitting diodes, Quantum efficiency, Transmittance, Physics, Crystals, Gallium

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Proceedings Article | 1 April 2005 Paper

Fabrication of UV devices on various plane substrates

Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, Akira Honshio, Yasuto Miyake, Hideki Kasugai, Krishnan Balakrishnan, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597124

KEYWORDS: Gallium, Crystals, Gallium nitride, Aluminum nitride, Sapphire, Ultraviolet radiation, Light emitting diodes, Aluminum, Cladding, Luminous efficacy

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Proceedings Article | 25 July 2003 Paper

Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Hiroshi Amano, Motoaki Iwaya, Shugo Nitta, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, Satoshi Kamiyama, Isamu Akasaki, H. Kinoshita, T. Matsuda, S. Otani

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.483614

KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Flexible displays, LED displays, Gallium, Thin films, Aluminum nitride, Glasses, Diodes

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Proceedings Article | 11 June 2003 Paper

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galina Pozina, J. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511285

KEYWORDS: Quantum wells, Electroluminescence, Gallium nitride, Silicon, Doping, Luminescence, Optical properties, Excitons, Interfaces, Polarization

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Proceedings Article | 9 July 2001 Paper

Transverse-mode control in GaN-based laser diodes

Hiroshi Amano, Satoshi Kamiyama, T. Detchprohm, Toshiyuki Sato, Motoaki Iwaya, Shugo Nitta, Shinji Terao, Isamu Akasaki

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432610

KEYWORDS: Refractive index, Cladding, Semiconductor lasers, Gallium nitride, Waveguides, Sapphire, Crystals, Beam controllers, Control systems, Electrodes

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Showing 5 of 49 publications

Conference Committee Involvement (11)

Light-Emitting Devices, Materials, and Applications

4 February 2019 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

29 January 2018 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

30 January 2017 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

15 February 2016 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

10 February 2015 | San Francisco, California, United States

Showing 5 of 11 Conference Committees

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