Paper
11 June 2003 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Bo Monemar, Plamen P. Paskov, H. Haratizadeh, Galina R. Pozina, J. P. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki
Author Affiliations +
Abstract
We report on low temperature photoluminescence (PL) in InxGa1-xN multiple qunatum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. One sample with 3 QWs of width 3.5 nm and barriers of width 10.5 nm had the MQW in the depletion region of the outer surface. Two PL peaks were observed, one QW exciton from the QW closest to the GaN buffer, one lower energy peak related to a 2DEG at the interface to the GaN buffer layer. In a second similar sample 5 QWs of width 3 nm and with 6 nm highly Si doped In0.01Ga0.99N barriers the MQW was placed in the n-side depletion region of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for n-doped Al0.07Ga0.93N/GaN structures, with near surface MQWs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bo Monemar, Plamen P. Paskov, H. Haratizadeh, Galina R. Pozina, J. P. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, and Isamu Akasaki "Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511285
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KEYWORDS
Quantum wells

Electroluminescence

Gallium nitride

Silicon

Doping

Luminescence

Excitons

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