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21 March 2023 MOVPE-growth of conductive AlInN/GaN DBRs towards GaN-based VCSELs
Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2647715
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Many efforts for GaN-based VCSEL developments have been pursued so far. One of the most promising reflectors for the VCSELs is a lattice-matched AlInN/GaN DBR. In principle, simple device process after the epitaxial growth and a vertical current injection through a conductive DBR are expected. We proposed two new approaches to obtain high quality conductive AlInN/GaN DBRs, one is an implementation of a high-temperature-grown AlGaN graded layer instead of a low-temperature-grown AlGaInN graded layer, and the other is an introduction of a hydrogen treatment instead of a thermal treatment. Both the approaches are useful to obtain high-quality Si-doped conductive AlInN/GaN DBRs.
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Tetsuya Takeuchi, Satoshi Kamiyama, and Motoaki Iwaya "MOVPE-growth of conductive AlInN/GaN DBRs towards GaN-based VCSELs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2647715
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KEYWORDS
Vertical cavity surface emitting lasers
Gallium nitride
Interfaces
Hydrogen
Reflectivity
Reflectors
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