Prof. Russell D. Dupuis Profile

Prof. Russell D. Dupuis

Endowed Chair Professor at Georgia Institute of Technology

SPIE Involvement:

Author

Publications (35)

Proceedings Article | 5 March 2022 Presentation

Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes

Russell Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, A. Nepomuk Otte

Proceedings Volume PC12001, PC120010P (2022) https://doi.org/10.1117/12.2608330

KEYWORDS: Deep ultraviolet, Avalanche photodetectors, Avalanche photodiodes, Metals, Metalorganic chemical vapor deposition, Etching, Doping, Aluminum nitride, TCAD, Structural design

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Proceedings Article | 5 March 2022 Presentation

High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach

Russell Dupuis, Frank Mehnke, Alec Fischer, Zhiyu Xu, Henri Bouchard, Theeradetch Detchprohm, Shyh-Chiang Shen, Fernando Ponce

Proceedings Volume PC12001, PC1200103 (2022) https://doi.org/10.1117/12.2607411

KEYWORDS: Ultraviolet radiation, Gallium nitride, Aluminum, Semiconductor lasers, Heterojunctions, Waveguides, Superlattices, Refraction, Near ultraviolet, Doping

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Proceedings Article | 6 March 2021 Poster

Development of (In)AlGaN-based UV laser diodes emitting at 369 nm

Frank Mehnke, Zhiyu Xu, Theeradetch Detchprohm, Minkyu Cho, Shyh-Chiang Shen, Russell Dupuis

Proceedings Volume 11686, 116862I (2021) https://doi.org/10.1117/12.2577836

KEYWORDS: Semiconductor lasers, Ultraviolet radiation, Magnesium, Diffusion, Aluminum, Waveguides, Temperature metrology, Refraction, Near ultraviolet, Indium gallium nitride

Proceedings Article | 5 March 2021 Presentation + Paper

Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays

Marzieh Bakhtiary-Noodeh, Minkyu Cho, Zhiyu Xu, Hoon Jeong, A. Nepomuk Otte, Shyh-Chiang Shen, Theeradetch Detchprohm, Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis

Proceedings Volume 11686, 1168614 (2021) https://doi.org/10.1117/12.2576888

KEYWORDS: Gallium nitride, Ultraviolet radiation, Avalanche photodiodes, Avalanche photodetectors, Semiconducting wafers, Metalorganic chemical vapor deposition, Mass spectrometry, Ions, Dry etching

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Proceedings Article | 20 September 2020 Paper

GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis

Proceedings Volume 11530, 115300Q (2020) https://doi.org/10.1117/12.2573387

KEYWORDS: Ultraviolet radiation, Avalanche photodiodes, Sensors, Defense technologies, UV optics, Earth sciences, Ultraviolet detectors, Metalorganic chemical vapor deposition, Gallium nitride, Computer engineering

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Proceedings Article | 22 August 2020 Paper

GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis

Proceedings Volume 11503, 115030L (2020) https://doi.org/10.1117/12.2571230

KEYWORDS: Gallium nitride, Avalanche photodetectors, Ultraviolet radiation, Sensors, Metalorganic chemical vapor deposition, Avalanche photodiodes, Ultraviolet detectors

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Proceedings Article | 10 October 2019 Presentation + Paper

Development of high-performance detector technology for UV and IR applications

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Nibir Dhar, Samiran Ganguly, Avik Ghosh, Russell Dupuis

Proceedings Volume 11151, 1115113 (2019) https://doi.org/10.1117/12.2536257

KEYWORDS: Sensors, Mid-IR, Mercury cadmium telluride, Ultraviolet radiation, Graphene, Silicon, Gallium nitride, Infrared sensors, Photodetectors, Avalanche photodetectors

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Proceedings Article | 9 September 2019 Presentation + Paper

GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis

Proceedings Volume 11129, 111290F (2019) https://doi.org/10.1117/12.2531644

KEYWORDS: Ultraviolet radiation, Avalanche photodiodes, Sensors, Sensor performance, Defense technologies, UV optics, Earth sciences, Ultraviolet detectors, Metalorganic chemical vapor deposition, Gallium nitride

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Proceedings Article | 9 September 2019 Paper

III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition

Russell Dupuis, Theeradetch Detchprohm, Hi-Hee Ji, Marzieh Bakhtiary-Noodeh, Hoon Jeong, Ping Chen, Shyh-Chiang Shen, Chuan-Wei Tsou, Karan Mehta, P. Douglas Yoder

Proceedings Volume 11086, 110860C (2019) https://doi.org/10.1117/12.2540048

KEYWORDS: Gallium nitride, Ultraviolet radiation, Avalanche photodetectors, Metalorganic chemical vapor deposition, Aluminum, Light emitting diodes, Vertical cavity surface emitting lasers, Photodetectors, Semiconducting wafers, Sensors

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Proceedings Article | 13 May 2019 Paper

High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis

Proceedings Volume 10980, 109800M (2019) https://doi.org/10.1117/12.2521464

KEYWORDS: Ultraviolet radiation, Gallium nitride, Avalanche photodetectors, Metalorganic chemical vapor deposition, Sensors, Avalanche photodiodes, Ultraviolet detectors

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Proceedings Article | 1 March 2019 Paper

Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area

Mi-Hee Ji, Hoon Jeong, Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Theeradetch Detchprohm, Ashok Sood, P. Parminder Ghuman, Sachidananda Babu, Nibir Dhar, Jay Lewis, Russell Dupuis

Proceedings Volume 10918, 1091814 (2019) https://doi.org/10.1117/12.2507880

KEYWORDS: Gallium nitride, Avalanche photodiodes, Absorption, Ultraviolet radiation, Detector arrays, Metalorganic chemical vapor deposition, Back illuminated sensors, UV optics

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Proceedings Article | 1 March 2019 Presentation + Paper

Optically pumped vertical-cavity surface-emitting lasers at 375 nm with air-gap/Al0.05Ga0.95N distributed Bragg reflectors

Young Jae Park, Theeradetch Detchprohm, Karan Mehta, Jialin Wang, Hoon Jeong, Yuh-Shiuan Liu, Ping Chen, Shuo Wang, Shyh-Chiang Shen, P. Douglas Yoder, Fernando Ponce, Russell Dupuis

Proceedings Volume 10938, 109380A (2019) https://doi.org/10.1117/12.2510268

KEYWORDS: Electrochemical etching, Indium gallium aluminum nitride, UV optics, Vertical cavity surface emitting lasers, Optical pumping, Gallium nitride, Distributed Bragg reflectors, Dielectrics, Excimer lasers, Semiconductors

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Proceedings Article | 1 March 2019 Presentation + Paper

III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors

Jialin Wang, Chuan-Wei Tsou, Hoon Jeong, Young-Jae Park, Theeradetch Detchprohm, Karan Mehta, P. Douglas Yoder, Russell Dupuis, Shyh-Chiang Shen

Proceedings Volume 10918, 109180E (2019) https://doi.org/10.1117/12.2510860

KEYWORDS: Mirrors, Etching, Reflectivity, Semiconductors, Ultraviolet radiation, Light emitting diodes, Vertical cavity surface emitting lasers, Electroluminescence, Distributed Bragg reflectors, Semiconducting wafers

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Proceedings Article | 1 March 2019 Paper

Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures

Ping Chen, Young Jae Park, Yuh-Shiuan Liu, Theeradetch Detchprohm, P. Douglas Yoder, Shyh-Chiang Shen, Russell Dupuis

Proceedings Volume 10940, 1094005 (2019) https://doi.org/10.1117/12.2510999

KEYWORDS: Indium gallium nitride, Quantum wells, Ultraviolet radiation, Gallium, Aluminum, Metalorganic chemical vapor deposition, Interfaces, UV optics, Thermal effects, Indium

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Proceedings Article | 18 September 2018 Presentation + Paper

Development of high performance ultraviolet and near-infrared detector technologies

Ashok Sood, John Zeller, Parminder Ghuman, Sachidananda Babu, Russell Dupuis, Harry Efstathiadis

Proceedings Volume 10766, 1076609 (2018) https://doi.org/10.1117/12.2323642

KEYWORDS: Sensors, Ultraviolet radiation, Near infrared, Gallium nitride, Germanium, Photodetectors, Avalanche photodetectors, Metalorganic chemical vapor deposition, Detector development

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Proceedings Article | 19 April 2017 Presentation

Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation)

Yuh-Shiuan Liu, Tsung-Ting Kao, Yuanzeng Zhu, Young Jae Park, Karan Mehta, Shuo Wang, Shyh-Chiang Shen, Douglas Yoder, Fernando Ponce, Theeradetch Detchprohm, Russell Dupuis

Proceedings Volume 10104, 1010405 (2017) https://doi.org/10.1117/12.2249958

KEYWORDS: Oxidation, Process control, Vertical cavity surface emitting lasers, Ultraviolet radiation, Optical microcavities, Light emitting diodes, Laser damage threshold, Semiconductor lasers, Photons, Distributed Bragg reflectors

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Proceedings Article | 26 February 2016 Paper

Development for ultraviolet vertical cavity surface emitting lasers

Yuh-Shiuan Liu, Tsung-Ting Kao, Karan Mehta, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell Dupuis, Hongen Xie, Fernando Ponce

Proceedings Volume 9748, 974815 (2016) https://doi.org/10.1117/12.2212617

KEYWORDS: Resistance, Vertical cavity surface emitting lasers, Ultraviolet radiation, Reflectivity, Gallium nitride, Light emitting diodes, Metalorganic chemical vapor deposition, Silicon, Metals, Applied physics

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Proceedings Article | 28 August 2015 Paper

Development of high gain avalanche photodiodes for UV imaging applications

Ashok Sood, John Zeller, Roger Welser, Yash Puri, Russell Dupuis, Mi-Hee Ji, Jeomoh Kim, Theeradetch Detchprohm, Nibir Dhar, Jay Lewis, Roy Peters

Proceedings Volume 9609, 96090X (2015) https://doi.org/10.1117/12.2193182

KEYWORDS: Gallium nitride, Ultraviolet radiation, Avalanche photodetectors, Sapphire, Avalanche photodiodes, Absorption, Cameras, UV optics, Crystals, Reliability

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Proceedings Article | 27 February 2014 Paper

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh-Shiuan Liu, Tsung-Ting Kao, Md. Mahbub Satter, Zachary Lochner, Xiao-Hang Li, Shyh-Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Proceedings Volume 9002, 90020H (2014) https://doi.org/10.1117/12.2036835

KEYWORDS: Coating, Aluminum nitride, Reflectors, Deep ultraviolet, Optical pumping, Metalorganic chemical vapor deposition, Ultraviolet radiation, Reflectivity, Laser damage threshold, Aluminum

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Proceedings Article | 19 September 2013 Paper

Development of III-N UVAPDs for ultraviolet sensor applications

Ashok Sood, Robert Richwine, Roger Welser, Yash Puri, Russell Dupuis, Mi-Hee Ji, Jeomoh Kim, Theeradetch Detchprohm, Nibir Dhar, Roy Peters

Proceedings Volume 8868, 88680T (2013) https://doi.org/10.1117/12.2032207

KEYWORDS: Ultraviolet radiation, Avalanche photodetectors, Signal to noise ratio, Pulsed laser operation, Ultraviolet detectors, Atmospheric modeling, Sensors, Target detection, Gallium nitride, Metalorganic chemical vapor deposition

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Proceedings Article | 4 March 2013 Paper

Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung-Ting Kao, Yuh-Shiuan Liu, Xiao-Hang Li, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Jae-Hyun Ryou, Russell Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Proceedings Volume 8625, 862519 (2013) https://doi.org/10.1117/12.2008830

KEYWORDS: Aluminum nitride, Optical pumping, Metalorganic chemical vapor deposition, Sapphire, Polarization, Laser optics, Deep ultraviolet, Silicon carbide, Semiconductor lasers, Laser damage threshold

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Proceedings Article | 23 May 2012 Paper

Development of small unit cell avalanche photodiodes for UV imaging applications

Ashok Sood, Roger Welser, Robert Richwine, Yash Puri, Russell Dupuis, Jae-Hyun Ryou, Nibir Dhar, P. Suvarna, F. Shahedipour-Sandvik

Proceedings Volume 8375, 83750R (2012) https://doi.org/10.1117/12.923182

KEYWORDS: Avalanche photodetectors, Ultraviolet radiation, Gallium nitride, Signal to noise ratio, Pulsed laser operation, Sensors, Atmospheric modeling, Target detection, Image resolution, Ultraviolet detectors

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SPIE Journal Paper | 6 April 2012 Open Access

Publisher's Note: Growth and characterization of In_xGa₁−xN alloys by metalorganic chemical vapor deposition for solar cell applications

Yong Huang, Jae-Hyun Ryou, Russell Dupuis, Andrew Melton, Muhammad Jamil, Ian Ferguson, Balakrishnam Jampana

JPE, Vol. 2, Issue 1, 020101, (April 2012) https://doi.org/10.1117/12.10.1117/1.JPE.2.020101

KEYWORDS: Metalorganic chemical vapor deposition, Solar cells, Gallium, Computer engineering, Materials science, Indium, Compound semiconductors, Data processing

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Proceedings Article | 16 September 2011 Paper

Avalanche photodiodes for high-resolution UV imaging applications

Ashok Sood, Robert Richwine, E. James Egerton, Yash Puri, Russell Dupuis, Nibir Dhar, Raymond Balcerak

Proceedings Volume 8155, 815509 (2011) https://doi.org/10.1117/12.895288

KEYWORDS: Ultraviolet radiation, Avalanche photodetectors, Signal to noise ratio, Pulsed laser operation, Interference (communication), Sensors, Target detection, Image resolution, Gallium nitride, Electrons

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Proceedings Article | 31 August 2010 Paper

Development of GaN/AlGaN APDs for UV imaging applications

Ashok Sood, Robert Richwine, Yash Puri, Russell Dupuis, Jae-Hyun Ryou, Nibir Dhar, Raymond Balcerak

Proceedings Volume 7780, 77800E (2010) https://doi.org/10.1117/12.866361

KEYWORDS: Ultraviolet radiation, Avalanche photodetectors, Signal to noise ratio, Pulsed laser operation, Interference (communication), Sensors, Target detection, Gallium nitride, Electrons, Image resolution

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Proceedings Article | 18 March 2010 Paper

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu, Yun Zhang, Zachary Lochner, Seong-soo Kim, Hyunsoo Kim, Jae-Hyun Ryou, Shyh-Chiang Shen, P. Doug Yoder, Russell Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce

Proceedings Volume 7602, 760219 (2010) https://doi.org/10.1117/12.842334

KEYWORDS: Waveguides, Gallium nitride, Indium gallium nitride, Semiconductor lasers, Electroluminescence, Sapphire, Electron beam lithography, Quantum wells, Cladding, Structural design

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Proceedings Article | 15 February 2008 Paper

InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers

Russell Dupuis, Jae Limb, Jianping Liu, Jae-Hyun Ryou, Clarissa Horne, Dongwon Yoo

Proceedings Volume 6894, 68941D (2008) https://doi.org/10.1117/12.766915

KEYWORDS: Green light emitting diodes, Light emitting diodes, Indium gallium nitride, Indium, Gallium, Superlattices, Electroluminescence, Gallium nitride, Quantum wells, Laser sintering

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Proceedings Article | 7 November 2007 Paper

High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates

Russell Dupuis, Jae-Hyun Ryou, Dongwon Yoo, J. B. Limb, Yun Zhang, Shyh-Chiang Shen, Douglas Yoder

Proceedings Volume 6739, 67391B (2007) https://doi.org/10.1117/12.738505

KEYWORDS: Gallium nitride, Aluminum, Avalanche photodetectors, Gallium, Ultraviolet radiation, Aluminum nitride, Absorption, Metalorganic chemical vapor deposition, Ultraviolet detectors, Sapphire

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Proceedings Article | 14 August 2003 Open Access

Photodetectors: UV to IR

Joe Campbell, Shuling Wang, Xiaoguang Zheng, Xiaowei Li, Ning Li, Feng Ma, Xiaoguang Sun, Charles Collins, A. Beck, B. Yang, Jeffrey Hurst, Rubin Sidhu, Archie Holmes, U. Chowdhury, Michael Wong, Russell Dupuis, Andrew Huntington, Larry Coldren, Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511201

KEYWORDS: Avalanche photodetectors, Aluminum, Gallium, Photodetectors, Photodiodes, Gallium arsenide, Ionization, Electrons, Ultraviolet radiation, Quantum dots

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Proceedings Article | 1 July 2003 Paper

Photodetectors: UV to IR

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482483

KEYWORDS: Avalanche photodetectors, Photodetectors, Ionization, Electrons, Quantum dots, Ultraviolet radiation, Resistance, External quantum efficiency, Avalanche photodiodes, Indium arsenide

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Proceedings Article | 28 August 2002 Paper

Back-illuminated solar-blind AlxGa1-xN p-i-n photodiodes

J. Campbell, Chris Collins, M. Wong, U. Chowdhury, Russell Dupuis

Proceedings Volume 10303, 103030G (2002) https://doi.org/10.1117/12.482619

KEYWORDS: Back illuminated sensors, Gallium nitride, Photodiodes, External quantum efficiency, Ultraviolet radiation, Aluminum, Quantum efficiency, Photodetectors, Absorption, Sapphire

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Proceedings Article | 23 April 2001 Paper

Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques

Michael Wraback, Hongen Shen, M. Wood, John Carrano, Charles Collins, Ting Li, Joe Campbell, Christopher Eiting, Damien Lambert, U. Chowdhury, M. Wong, Russell Dupuis, Matthew Schurman, Ian Ferguson

Proceedings Volume 4280, (2001) https://doi.org/10.1117/12.424741

KEYWORDS: Diodes, Electron transport, Gallium nitride, Picosecond phenomena, Femtosecond phenomena, Heterojunctions, Absorption, Interfaces, Scattering, Information operations

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Proceedings Article | 26 October 2000 Paper

AlGaN/GaN ultraviolet photodetectors

Joe Campbell, Ting Li, Shuling Wang, Ariane Beck, Charles Collins, Bo Yang, Damien Lambert, Russell Dupuis, John Carrano, Matthew Schurman, Ian Ferguson

Proceedings Volume 4134, (2000) https://doi.org/10.1117/12.405335

KEYWORDS: Ultraviolet radiation, Gallium nitride, Photodetectors, Photodiodes, Quantum efficiency, Resistance, PIN photodiodes, External quantum efficiency, Aluminum, Diodes

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Proceedings Article | 13 April 2000 Paper

High-performance GaN/AlGaN-based ultraviolet photodetectors

John Carrano, Ting Li, Charles Collins, Ariane Beck, Shuling Wang, Bo Yang, Damien Lambert, Christopher Eiting, Russell Dupuis, Joe Campbell, Michael Wraback, Hongen Shen, Matthew Schurman, Ian Ferguson

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382125

KEYWORDS: Gallium nitride, Ultraviolet radiation, Quantum efficiency, Photodetectors, Photodiodes, PIN photodiodes, Absorption, Avalanche photodetectors, Resistance, Diffusion

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Proceedings Article | 13 April 2000 Paper

High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure

Ting Li, Shuling Wang, Ariane Beck, Charles Collins, Bo Yang, Russell Dupuis, John Carrano, Matthew Schurman, Ian Ferguson, Joe Campbell

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382131

KEYWORDS: Quantum efficiency, Gallium nitride, Ultraviolet radiation, Photodetectors, Heterojunctions, Photodiodes, Raster graphics, Reactive ion etching, External quantum efficiency, PIN photodiodes

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Showing 5 of 35 publications

Conference Committee Involvement (1)

GaN Materials and Devices

23 January 2006 | San Jose, California, United States

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