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5 March 2022 Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes
Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, A. Nepomuk Otte
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010P (2022) https://doi.org/10.1117/12.2608330
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Solar-blind (<280nm) deep-ultraviolet (DUV) avalanche photodetectors (APDs) are of importance in various applications such as quantum communication, biomedical, defense, and non-line-of-sight (NLOS) communication. This makes the detectors from AlxGa1-xN materials attractive for such applications owing to their wide direct-bandgap characteristics. In this work, top-illuminated DUV Al0.6Ga0.4N p-i-n APD structures were designed, grown by metalorganic chemical vapor deposition on bulk AlN substrates, and fabricated. The devices showed distinctive avalanche breakdown behavior, with breakdown voltages of -150V, and low-leakage current density of <10-8A/cm2. The peak spectral response is 141mA/W at the wavelength of 245nm under 0V.
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Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, and A. Nepomuk Otte "Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010P (5 March 2022); https://doi.org/10.1117/12.2608330
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KEYWORDS
Avalanche photodetectors
Deep ultraviolet
Avalanche photodiodes
Aluminum nitride
Doping
Etching
Metalorganic chemical vapor deposition
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