Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

Zachary Lochner; Tsung-Ting Kao; Yuh-Shiuan Liu; Xiao-Hang Li; Md. Mahbub Satter; Shyh-Chiang Shen; P. Douglas Yoder; Jae-Hyun Ryou; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando A. Ponce

doi:10.1117/12.2008830

4 March 2013 Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung-Ting Kao, Yuh-Shiuan Liu, Xiao-Hang Li, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Jae-Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando A. Ponce

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862519 (2013) https://doi.org/10.1117/12.2008830
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ~1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 ºC. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm² and laser emission is observed at 247 nm.

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Zachary Lochner, Tsung-Ting Kao, Yuh-Shiuan Liu, Xiao-Hang Li, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Jae-Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, and Fernando A. Ponce "Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862519 (4 March 2013); https://doi.org/10.1117/12.2008830

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