Subwavelength grating metamaterials have become an integral design tool in silicon photonics. The lithographic segmentation of integrated waveguides at the subwavelength scale allows us to control optical properties such as mode delocalization, wavelength dispersion, and birefringence. So far, a range of subwavelength-based devices with unprecedented performance has been demonstrated, such as couplers, polarization-handling structures, filters, and input/output chip interfaces. In this invited talk, we will review the anisotropic foundations of subwavelength-grating metamaterial design and will provide an overview of our latest advances in subwavelength-enhanced silicon photonics devices, including optical antennas for beam steering and multi-line Bragg filters for spectral shaping.
Realizing optically and/or electrically tunable plasmonic resonances in the visible to ultraviolet (UV) spectral region is particularly important for reconfigurable photonic device applications. Ultrathin layered group-III chalcogenides, such as GaS, GaSe, GaTe, Sb2S3, are particularly intriguing 2D materials that are revealing exotic phase-change properties with great promise for application in next generation reconfigurable electronics and optoelectronic devices.
In this contribution, we present experimental and calculated results obtained on low-loss layered phase-change semiconducting materials of GaS, GaSe, GaTe, Sb2S3, which shows in addition to the conventional amorphous to crystalline phase transition (like the GST family), order-order (polytypes), metal-to-insulator transitions that can be triggered electrically, optically and via plasmonic coupling with alternative phase-change plasmonic metals.
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