We present the first steps toward the development of MoS2/Si heterojunctions photovoltaics, essentially for integrated photonic devices applications.
Therefore, we conjugate numerical device simulation, optical and structural characterizations, and density functional theory calculations. Through numerical device simulation, we show the potential of such solar cells, with attainable power conversion efficiencies of about 20%. Optical and structural characterizations of thin 2H-MoS2 layers deposited on SiO2 80nm/Si (001) substrates provides a path for the optimization of the 2D MoS2 material. With DFT calculations, we open the door for the optimization of the MoS2/Si interface, which is crucial for the device performances.
From plasmonics with pure coinage metallic materials to the current advances in phase-change materials (PCM), research in nanophotonics has rapidly evolved, pushed by its wide gamut of applications. In this contribution, we will present three phase-change material examples: MoOx, Ga2S3 and GaS as promising candidates for reconfigurable plasmonic applications with fast and low-loss response. The first because modification of its oxygen stoichiometry (2< ×<3) induce a phase change in the VIS region, suitable for developing reflective pixels for display applications. The other two, because they show phase transitions due to changes in their lattice configurations, making them attractive for new broadband devices for switching and photodetection applications. They will be characterized and studied by resorting to exact DFT calculations. Also, their plasmonic response as well as their possible plasmonic coupling effects will be analyzed by considering the different envisaged applications.
Realizing optically and/or electrically tunable plasmonic resonances in the visible to ultraviolet (UV) spectral region is particularly important for reconfigurable photonic device applications. Ultrathin layered group-III chalcogenides, such as GaS, GaSe, GaTe, Sb2S3, are particularly intriguing 2D materials that are revealing exotic phase-change properties with great promise for application in next generation reconfigurable electronics and optoelectronic devices.
In this contribution, we present experimental and calculated results obtained on low-loss layered phase-change semiconducting materials of GaS, GaSe, GaTe, Sb2S3, which shows in addition to the conventional amorphous to crystalline phase transition (like the GST family), order-order (polytypes), metal-to-insulator transitions that can be triggered electrically, optically and via plasmonic coupling with alternative phase-change plasmonic metals.
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