We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon nitride cavity using the technique of micro-transfer printing. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the control of the optical spectrum across a wide range of wavelengths spanning from 1530 nm to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23 nm wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.
Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.
Micro-transfer-printing (µTP) enables the intimate integration of diverse non-inherent functionalities on a target substrate and hence allows for the realization of complex photonic integrated circuits (PICs) with small footprint. By employing a polydimethylsiloxane (PDMS) elastomeric stamp with an array of posts, a large number of micro-components can be integrated on a target wafer in one transfer printing operation, which leads to substantial cost reduction of the resulting PICs. This paper discusses the use of µTP for the realization of III-V lasers on Si and SiN PICs and summarizes the recent progress that has been made in this field.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.