Presentation + Paper
12 March 2024 Tunable heterogeneous III-V-on-silicon-nitride mode-locked laser
Author Affiliations +
Proceedings Volume 12891, Silicon Photonics XIX; 128910C (2024) https://doi.org/10.1117/12.2691021
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon nitride cavity using the technique of micro-transfer printing. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the control of the optical spectrum across a wide range of wavelengths spanning from 1530 nm to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23 nm wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Maximilien Billet, Stijn Poelman, Stijn Cuyvers, Artur Hermans, Sandeep Seema Saseendran, Tasuku Nakamura, Shinya Okamoto, Yasuhisa Inada, Kazuya Hisada, Taku Hirasawa, Joan Ramirez, Delphine Néel, Nicolas Vaissière, Gunther Roelkens, Jon Ø. Kjellman, and Bart Kuyken "Tunable heterogeneous III-V-on-silicon-nitride mode-locked laser", Proc. SPIE 12891, Silicon Photonics XIX, 128910C (12 March 2024); https://doi.org/10.1117/12.2691021
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KEYWORDS
Mode locking

Silicon nitride

Tunable lasers

Semiconductor lasers

Printing

Laser applications

Semiconductor optical amplifiers

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