Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

Akinori Saeki; Takahiro Kozawa; Seiichi Tagawa; Heidi B. Cao; Hai Deng; Michael J. Leeson

doi:10.1117/12.772174

26 March 2008 Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

Akinori Saeki, Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao, Hai Deng, Michael J. Leeson

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69230S (2008) https://doi.org/10.1117/12.772174
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

It is well-known that line edge roughness (LER) of patterned features in chemically amplified (CA) resists is formed in the acid generation stage and expected to be moderated by the acid diffusion and development process. To provide an insight into the limit of LER is essential for the realization of next-generation lithographies such as electron beam or extreme ultraviolet. Based on the results of Monte Carlo simulation which reproduces dynamics of chemical intermediates in positive-tone CA resist, we discuss the possibility of low LER (high frequency) after development. It is found that low LER is achievable; however, the process condition is still strict.

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Akinori Saeki, Takahiro Kozawa, Seiichi Tagawa, Heidi B. Cao, Hai Deng, and Michael J. Leeson "Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230S (26 March 2008); https://doi.org/10.1117/12.772174

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