Multi-trigger resist for electron beam and extreme ultraviolet lithography

C. Popescu; A. McClelland; D. Kazazis; G. Dawson; J. Roth; Y. Ekinci; W. Theis; A. P. G. Robinson

doi:10.1117/12.2316628

19 September 2018 Multi-trigger resist for electron beam and extreme ultraviolet lithography

C. Popescu, A. McClelland, D. Kazazis, G. Dawson, J. Roth, Y. Ekinci, W. Theis, A. P. G. Robinson

Proceedings Volume 10775, 34th European Mask and Lithography Conference; 1077502 (2018) https://doi.org/10.1117/12.2316628
Event: 34th European Mask and Lithography Conference, 2018, Grenoble, France

Abstract

The multi-trigger resist (MTR) is a new negative tone molecular resist platform for electron beam lithography, as well as extreme ultraviolet and optical lithography. The performance of xMT resist, the precursor to MTR resist, which shows a good combination of sensitivity, low line edge roughness and high-resolution patterning has previously been reported.[1] In order to overcome limitations induced by acid diffusion, a new mechanism - the multi-trigger concept - has been introduced. The results obtained so far as the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation are presented. A feature size of 13 nm in semi-dense (1:1.5 line/space) patterns, and 22nm diameter pillar patterns are demonstrated in electron beam, and 16 nm half-pitch resolution patterns are demonstrated in (extreme ultraviolet) EUV. An improvement in the LER value is seen in the higher MTR formulations.

Citation Download Citation

C. Popescu, A. McClelland, D. Kazazis, G. Dawson, J. Roth, Y. Ekinci, W. Theis, and A. P. G. Robinson "Multi-trigger resist for electron beam and extreme ultraviolet lithography", Proc. SPIE 10775, 34th European Mask and Lithography Conference, 1077502 (19 September 2018); https://doi.org/10.1117/12.2316628

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KEYWORDS

Electron beam lithography

Electron beams

Line edge roughness

Extreme ultraviolet lithography

Extreme ultraviolet

Line width roughness

Lithography

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