Base quencher effects in chemically amplified resist at sub-30-nm fabrication

Takahiro Kozawa; Seiichi Tagawa; Julius Joseph Santillan; Minoru Toriumi; Toshiro Itani

doi:10.1117/12.772154

26 March 2008 Base quencher effects in chemically amplified resist at sub-30-nm fabrication

Takahiro Kozawa, Seiichi Tagawa, Julius Joseph Santillan, Minoru Toriumi, Toshiro Itani

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69230P (2008) https://doi.org/10.1117/12.772154
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

The trade-off between line edge roughness (LER), sensitivity and resolution is the most challenging issue associated with the development of resist processes for extreme ultraviolet (EUV) lithography. It has been reported that quenchers (base compounds) affect the sensitivity, the resolution and the extent of LER. However, the details are still unclear. In this study, the effects of quencher diffusion constants in 22 nm pattern formation were investigated using a simulation based on the reaction mechanism of chemically amplified EUV resists. For the suppression of line width expansion due to acid diffusion, mobile quenchers are effective. The quality of latent image is also improved with the increase of diffusion constant. However, the high mobility of quenchers increases the pattern dependence of line width. The same order of diffusion constants for acids and quenchers are preferable at sub-30 nm fabrication.

Citation Download Citation

Takahiro Kozawa, Seiichi Tagawa, Julius Joseph Santillan, Minoru Toriumi, and Toshiro Itani "Base quencher effects in chemically amplified resist at sub-30-nm fabrication", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230P (26 March 2008); https://doi.org/10.1117/12.772154

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