Line-width roughness analysis of EUV resists after development in homogenous CO<sub>2</sub> solutions using CO<sub>2</sub> compatible salts (CCS) by a three-parameter model

Vassilios Constantoudis; Evangelos Gogolides; George P. Patsis; Mark Wagner; James DeYoung; Chris Harbinson

doi:10.1117/12.656579

11 April 2006 Line-width roughness analysis of EUV resists after development in homogenous CO₂ solutions using CO₂ compatible salts (CCS) by a three-parameter model

Vassilios Constantoudis, Evangelos Gogolides, George P. Patsis, Mark Wagner, James DeYoung, Chris Harbinson

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61533W (2006) https://doi.org/10.1117/12.656579
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Line Width Roughness (LWR) of resists constitutes one of the main obstacles in the race of further shrinking the feature dimensions of fabricated devices. Thus, the reduction and control of LWR is one of the biggest challenges of next generation lithographies. In this paper, the LWR output of a new development process of EUV resists which uses homogeneous carbon dioxide (CO₂) solutions containing CO₂ compatible salts (CCS) has been examined. The measurement and characterization of LWR has been made through the analysis of CD-SEM images and the application of a three-parameter model. The three parameters involved in this model (sigma value σ_LWR, correlation length ξ, roughness exponent α) determine both the spatial aspects (spectrum) of LWR as well as the interplay between LWR and local CD variations. It is found that wafers developed with CCS process gives substantially lower LWR parameters (σLWR,ξ) than comparable TMAH developed samples. Also, the impact of the preparation of resist wafer (exposure time, PAG and quencher level) and the development conditions (temperature, CCS concentration) on LWR parameters is examined so that we are able to identify trends to lead toward optimized LWR performance.

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Vassilios Constantoudis, Evangelos Gogolides, George P. Patsis, Mark Wagner, James DeYoung, and Chris Harbinson "Line-width roughness analysis of EUV resists after development in homogenous CO₂ solutions using CO₂ compatible salts (CCS) by a three-parameter model", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533W (11 April 2006); https://doi.org/10.1117/12.656579

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