Dr. James P. DeYoung Profile

Dr. James P. DeYoung

Director of Research at Micell Technologies Inc

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Author

Publications (4)

Proceedings Article | 11 April 2006 Paper

Development of EUV resists in homogenous CO₂ solutions using CO₂ compatible salts (CCS): a kinetic view of dissolution of conventional resists in supercritical CO₂

James DeYoung, Mark Wagner, Chris Harbinson, Merrick Miles, Amy Zweber, Ruben Carbonell

Proceedings Volume 6153, 615345 (2006) https://doi.org/10.1117/12.655881

KEYWORDS: Photoresist materials, Photoresist developing, Standards development, Semiconducting wafers, Polymers, Crystals, Quartz, Extreme ultraviolet, Photoresist processing, Extreme ultraviolet lithography

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Proceedings Article | 11 April 2006 Paper

Development of EUV resists in supercritical CO₂ solutions using CO₂ compatible salts (CCS): Results from a two-level full factorial design of experiments (DOE)

Mark Wagner, James DeYoung, Chris Harbinson, Merrick Miles

Proceedings Volume 6153, 615346 (2006) https://doi.org/10.1117/12.656272

KEYWORDS: Standards development, Diffractive optical elements, Line width roughness, Extreme ultraviolet, Photoresist developing, Statistical analysis, Photoresist materials, Line edge roughness, Temperature metrology, Carbon dioxide

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Proceedings Article | 11 April 2006 Paper

Development of EUV resists in supercritical CO₂ solutions using CO₂ compatible salts (CCS)

Mark Wagner, James De Young, Chris Harbinson

Proceedings Volume 6153, 61531I (2006) https://doi.org/10.1117/12.655880

KEYWORDS: Standards development, Semiconducting wafers, Extreme ultraviolet, Chemistry, Photoresist developing, Line width roughness, Photoresist processing, Extreme ultraviolet lithography, Image processing, Photoresist materials

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Proceedings Article | 11 April 2006 Paper

Line-width roughness analysis of EUV resists after development in homogenous CO₂ solutions using CO₂ compatible salts (CCS) by a three-parameter model

Vassilios Constantoudis, Evangelos Gogolides, George Patsis, Mark Wagner, James DeYoung, Chris Harbinson

Proceedings Volume 6153, 61533W (2006) https://doi.org/10.1117/12.656579

KEYWORDS: Line width roughness, Semiconducting wafers, Standards development, Extreme ultraviolet, Critical dimension metrology, Line edge roughness, Image processing, Image analysis, Software development, Scanning electron microscopy

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