Simulation benchmarking

Jacek K. Tyminski; Toshiharu Nakashima; Takehito Kudo; Steve D. Slonaker; Shigeru Hirukawa

doi:10.1117/12.485447

26 June 2003 Simulation benchmarking

Jacek K. Tyminski, Toshiharu Nakashima, Takehito Kudo, Steve D. Slonaker, Shigeru Hirukawa

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485447
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Photolithography simulation has become a common methodology used in engineering tasks such as critical level patterning analysis and process design, patterning tool qualification to meet the process control requirements, selection of the patterning tools capable of delivering requisite patterning performance, and projection lens tuning for optimum patterning performance. Such diverse use of simulation is motivated by the need to quantify the patterning tradeoffs, when the performance margins collapse around the fundamental process constraints. These complex analysis and design tasks relay on various photolithography simulators available as commercial or proprietary software. The diversity of the available simulators poses two issues: what is the role of numerical methodologies in modifying the simulation analysis otherwise limited by the image formation fundamentals, and to what extend the results obtained with different simulators are similar to each other. In this paper, we present the results of the comparison involving three simulators, two of them commercial. The comparison involved image formation simulations of the current generation of the critical IC designs. The comparison was a basis of a judgment on the portability of simulation analyses obtained by various photolithography simulation tools.

Citation Download Citation

Jacek K. Tyminski, Toshiharu Nakashima, Takehito Kudo, Steve D. Slonaker, and Shigeru Hirukawa "Simulation benchmarking", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485447

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