Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography

Rainer Pforr; Kurt G. Ronse; Luc Van den Hove; Anthony Yen; Shane R. Palmer; Gene E. Fuller; Oberdan W. Otto

doi:10.1117/12.209249

26 May 1995 Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography

Rainer Pforr, Kurt G. Ronse, Luc Van den Hove, Anthony Yen, Shane R. Palmer, Gene E. Fuller, Oberdan W. Otto

Author Affiliations +

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209249
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The effectiveness of two methods of optical proximity correction based on feature biasing and subresolution assisting features is compared by simulation and experiments. Parameters examined are overlapping focus- exposure windows for dense lines, semi-isolated and isolated lines, and line-end shortening. Binary and phase-shifting masks containing test and real IC design features are proximity corrected either by commercial software (in the case of feature biasing) or by manual correction using optimized size and placement of assisting features. The results indicate that, while both methods are effective in reducing optical proximity effects, the feature-assisted method is more advantageous in many cases.

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Rainer Pforr, Kurt G. Ronse, Luc Van den Hove, Anthony Yen, Shane R. Palmer, Gene E. Fuller, and Oberdan W. Otto "Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209249

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