High-NA ArF lithography for 70-nm technologies

Patrick K. Montgomery; Geert Vandenberghe; Kevin Lucas

doi:10.1117/12.474570

30 July 2002 High-NA ArF lithography for 70-nm technologies

Patrick K. Montgomery, Geert Vandenberghe, Kevin Lucas

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474570
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Complementary phase shift mask (c:PSM) is one of the most promising resolution enhancement techniques (RET) to extend low k₁ optical lithography. Nonetheless binary intensity mask (BIM) imaged with 193 nm wavelength at high numerical aperture (0.75) off-axis illumination (OAI) might still be used for nested through isolated feature sizes as small as 70 nm. We compare the feasibility of using c:PSM and BIM for 70nm generation technologies. Experimental results of high NA imaged BIM and c:PSM are presented.

Citation Download Citation

Patrick K. Montgomery, Geert Vandenberghe, and Kevin Lucas "High-NA ArF lithography for 70-nm technologies", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474570

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available