Prof. Yuichi Inazuki Profile

Prof. Yuichi Inazuki

at Dai Nippon Printing Co Ltd

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 28 June 2013 Paper

Challenge for under 40nm size pattern making for EUV mask

Tsukasa Abe, Yuichi Inazuki, Yukie Kobayashi, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 8701, 87010R (2013) https://doi.org/10.1117/12.2030183

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Extreme ultraviolet lithography, Dry etching, Optical lithography, Inspection, Photoresist processing, Chromium, Wet etching

Read Abstract +

Proceedings Article | 7 April 2011 Paper

Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

Takeya Shimomura, Satoshi Kawashima, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Eric Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7969, 79691B (2011) https://doi.org/10.1117/12.879565

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Defect detection, Lithography, Manufacturing, Particles, Electronic components, Opacity

Read Abstract +

Proceedings Article | 2 April 2011 Paper

NGL masks: development status and issue

Naoya Hayashi, Tsukasa Abe, Takeya Shimomura, Yuichi Inazuki, Tadahiko Takikawa, Hiroshi Mohri

Proceedings Volume 7985, 798505 (2011) https://doi.org/10.1117/12.896886

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Defect inspection, EUV optics, Reflectivity, Optics manufacturing, Mask cleaning

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7823, 78232B (2010) https://doi.org/10.1117/12.868171

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Bridges, Opacity, Defect detection, Scanning electron microscopy, Optical inspection, Extreme ultraviolet lithography

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Investigation of the influence of resist patterning on absorber LWR for 22-nm-node EUV lithography

Yuichi Inazuki, Takeya Shimomura, Tsukasa Abe, Taichi Ogase, Satoshi Kawashima, Tadahiko Takigawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7823, 78231W (2010) https://doi.org/10.1117/12.869592

KEYWORDS: Line width roughness, Image segmentation, Photomasks, Optical lithography, Extreme ultraviolet lithography, Scanning electron microscopy, Extreme ultraviolet, Semiconducting wafers, Polymers, Optical properties

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Study of EUV mask defect repair using FIB method

Tsuyoshi Amano, Noriaki Takagi, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Anto Yasaka, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 7823, 782323 (2010) https://doi.org/10.1117/12.864213

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Cadmium sulfide, Image processing, Scanning electron microscopy, Transmission electron microscopy, Semiconducting wafers, Carbon, Ions

Read Abstract +

Proceedings Article | 11 June 2010 Paper

Short-range electron backscattering from EUV masks

Hiroyoshi Tanabe, Tsukasa Abe, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 7748, 774823 (2010) https://doi.org/10.1117/12.862641

KEYWORDS: Backscatter, Extreme ultraviolet, Photomasks, Monte Carlo methods, Scattering, Extreme ultraviolet lithography, Multilayers, Tantalum, Chromium, Cadmium sulfide

Read Abstract +

Proceedings Article | 27 May 2010 Paper

Characterization of line-width roughness about 22-32nm node EUV mask

Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7748, 774821 (2010) https://doi.org/10.1117/12.867910

KEYWORDS: Line width roughness, Photomasks, Image segmentation, Scanning electron microscopy, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Standards development, Lithography, Image analysis

Read Abstract +

Proceedings Article | 11 December 2009 Paper

EUV mask pattern inspection with an advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Abe Tsukasa, Tadahiko Takikawa, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7520, 75201D (2009) https://doi.org/10.1117/12.837025

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Defect detection, Opacity, Extreme ultraviolet lithography, Bridges, Silicon, Solids

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Development status of back-end process for UV-NIL template fabrication

Yuichi Inazuki, Kimio Itoh, Sho Hatakeyama, Kouichirou Kojima, Masaaki Kurihara, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7122, 71223Q (2008) https://doi.org/10.1117/12.803615

KEYWORDS: Particles, Inspection, Polishing, Nanoimprint lithography, Photomasks, Quartz, Contamination, Silicon, Surface finishing, Silica

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Mask CD compensation method using diffraction intensity for lithography equivalent metrology

Takaharu Nagai, Takanori Sutou, Yuichi Inazuki, Hiroyuki Hashimoto, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7028, 70281M (2008) https://doi.org/10.1117/12.793063

KEYWORDS: Diffraction, Photomasks, 3D modeling, 3D metrology, Printing, 3D printing, Binary data, Polarization, Lithography, Critical dimension metrology

Read Abstract +

Proceedings Article | 2 May 2008 Paper

Mask CD measurement approach by diffraction intensity for lithography equivalent

Takaharu Nagai, Kei Mesuda, Takanori Sutou, Yuichi Inazuki, Hiroyuki Hashimoto, Toshifumi Yokoyama, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6792, 67920N (2008) https://doi.org/10.1117/12.798781

KEYWORDS: Photomasks, 3D modeling, Diffraction, 3D metrology, Lithography, Scanning electron microscopy, Critical dimension metrology, Printing, 3D printing, Image analysis

Read Abstract +

Proceedings Article | 19 March 2008 Paper

Decomposition difficulty analysis for double patterning and the impact on photomask manufacturability

Yuichi Inazuki, Nobuhito Toyama, Takaharu Nagai, Takanori Sutou, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Martin Drapeau, Kevin Lucas, Chris Cork

Proceedings Volume 6925, 69251O (2008) https://doi.org/10.1117/12.773291

KEYWORDS: Inspection, Photomasks, Double patterning technology, Optical proximity correction, Lithography, Printing, Lithographic illumination, Binary data, Critical dimension metrology, Logic

Read Abstract +

Proceedings Article | 30 October 2007 Paper

DPL performance analysis strategy with conventional workflow

Nobuhito Toyama, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Junji Miyazaki, Alek Chen, Nandasiri Samarakone

Proceedings Volume 6730, 67301I (2007) https://doi.org/10.1117/12.747380

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Critical dimension metrology, Lithography, Optical proximity correction, Scanning electron microscopy, Double patterning technology, Error analysis, Bridges

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Estimating DPL photomask fabrication load compared with single exposure

Nobuhito Toyama, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Judy Huckabay, Yoshikuni Abe

Proceedings Volume 6730, 67301J (2007) https://doi.org/10.1117/12.746982

KEYWORDS: Photomasks, Optical proximity correction, Inspection, Design for manufacturing, Lithography, Double patterning technology, Electronic design automation, Vestigial sideband modulation, Beam shaping, Printing

Read Abstract +

Proceedings Article | 15 May 2007 Paper

Extendibility of single mask exposure for practical ArF immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6607, 660735 (2007) https://doi.org/10.1117/12.729024

KEYWORDS: Photomasks, SRAF, Lithography, Water, Lithographic illumination, Printing, Refractive index, Immersion lithography, Optical proximity correction, Quartz

Read Abstract +

Proceedings Article | 15 May 2007 Paper

Approach to analyze decomposition impact for photomask fabrication

Nobuhito Toyama, Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6607, 660733 (2007) https://doi.org/10.1117/12.729022

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Optical proximity correction, Double patterning technology, Mask making, Image registration, Overlay metrology, Device simulation, Statistical modeling

Read Abstract +

Proceedings Article | 3 May 2007 Paper

Characteristics optimization of mask materials for Hyper-NA lithography

Yasutaka Morikawa, Takanori Suto, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Yasuhisa Kitahata, Toshifumi Yokoyama, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6533, 653306 (2007) https://doi.org/10.1117/12.734498

KEYWORDS: Photomasks, Birefringence, Semiconducting wafers, Pellicles, Lithography, Lithographic illumination, Quartz, Polarization, Printing, Wafer-level optics

Read Abstract +

Proceedings Article | 27 March 2007 Paper

Analysis of diffraction orders including mask topography effects for OPC optimization

Yuichi Inazuki, Nobuhito Toyama, Takashi Adachi, Takaharu Nagai, Takanori Suto, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6520, 65204S (2007) https://doi.org/10.1117/12.711757

KEYWORDS: Diffraction, Optical proximity correction, Photomasks, 3D modeling, Systems modeling, Semiconducting wafers, Cadmium, Optical simulations, Finite-difference time-domain method, Model-based design

Read Abstract +

Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Yasutaka Morikawa, Takanori Sutou, Kei Mesuda, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi, Ulrich Stroessner, Robert Birkner, Rigo Richter, Thomas Scheruebl

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

Read Abstract +

Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Proceedings Article | 21 March 2007 Paper

Pattern decomposition for double patterning from photomask viewpoint

Nobuhito Toyama, Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6521, 65210V (2007) https://doi.org/10.1117/12.711915

KEYWORDS: Photomasks, Double patterning technology, Semiconducting wafers, Lithography, Optical proximity correction, Statistical modeling, Chemical elements, Logic, Overlay metrology, Phase shifts

Read Abstract +

Proceedings Article | 20 October 2006 Paper

45-32-nm node photomask technology with water immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6349, 63493J (2006) https://doi.org/10.1117/12.689740

KEYWORDS: Lithography, Photomasks, SRAF, Lithographic illumination, Resolution enhancement technologies, Optical proximity correction, Printing, Double patterning technology, Immersion lithography, Semiconducting wafers

Read Abstract +

Proceedings Article | 20 May 2006 Paper

Lithographic performance comparison with various RET for 45-nm node with hyper NA

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasuhisa Kitahata, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6283, 62832W (2006) https://doi.org/10.1117/12.681813

KEYWORDS: Photomasks, Resolution enhancement technologies, Optical proximity correction, Etching, Lithography, Quartz, Printing, SRAF, Electroluminescence, Lithographic illumination

Read Abstract +

Proceedings Article | 20 May 2006 Paper

In-field CD uniformity control by altering transmission distribution of the photomask using ultra-fast pulsed laser technology

Yasutaka Morikawa, Takanori Sutou, Yuichi Inazuki, Takashi Adachi, Yuuichi Yoshida, Kouichirou Kojima, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Vladimir Dmitriev, Sergey Oshemkov, Eitan Zait, Guy Ben-Zvi

Proceedings Volume 6283, 62831Y (2006) https://doi.org/10.1117/12.681762

KEYWORDS: Semiconducting wafers, Photomasks, Signal attenuation, Critical dimension metrology, Binary data, Ultrafast phenomena, Laser applications, Laser scattering, Quartz, Scattering

Read Abstract +

Showing 5 of 24 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years