In this talk, we will present two elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). One is nitrogen doping to a Ga2O3 channel layer to realize normally-off operation of Ga2O3 MOSFETs, and the other is an (AlGa)2O3 back barrier to shift a threshold gate voltage of Ga2O3 MOSFETs with a Si-implanted channel toward the positive voltage side.
Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.
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