Wide-bandgap semiconductors are fundamental components in many optoelectronic and power devices. The free-carrier properties, i.e., carrier density and mobility, are crucial parameters that determine device performance. This paper presents the characterization of a gallium nitride (GaN) wafer with ~1016 cm-3 carrier concentration using terahertz (THz) time- domain ellipsometry. In addition, THz time-domain spectroscopy of monoclinic beta-gallium oxide (β-Ga2O3) semi- insulating bulk and n-type homoepitaxial film are presented. The free-carrier properties are extracted by theoretically fitting the complex refractive index to the Drude and Drude-Lorentz models. THz time-domain techniques are a practical and powerful tool to nondestructively characterize the free-carrier properties of wide-bandgap semiconductors for device development.
High-temperature AlN homoepitaxial growth up to 1600℃ by HVPE was investigated. High-purity AlN with excellent crystallinity was reported where HVPE-AlN was homoepitaxially grown on the PVT-AlN substrate. However, quartz-derived impurities incorporation was slightly problematic in the HVPE-AlN. In this study, a new reactor was introduced that is a quartz glass reactor including a high-temperature growth zone constructed with heat-resistant materials. O and Si impurity incorporation was reduced with high growth rates of around 150 μm/h by the newly introduced high-temperature growth system.
This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.
The development of high-power and reliable deep-UV optical devices requires low dislocation density AlN substrates. In this study, thick AlN layers were homoepitaxially grown on PVT-AlN(0001) substrates by HVPE method at a growth rate above 100 μm/h. The grown layer showed low dislocation densities of less than 1E4 cm^-2 and a high deep-UV optical transparency. Recent expansions in both diameter of the substrate and size of the growth reactor have enabled mass-production of 2-inch-diameter HVPE-AlN substrates for deep-UV optical devices. This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.
Gallium oxide (Ga2O3) is positively researched as one of the ultra-wide-bandgap semiconductor materials which are expected to realize cost-effective power devices. To demonstrate device performances, many efforts have been paid on the investigation of crystal growth methods to prepare high-quality drift layers. Among them, halide vapor phase epitaxy (HVPE) has advanced as a capable growth method for n-type conductivity-controlled β-Ga2O3 homoepitaxial layers with a wide range by Si doping. Recently, the fabrication of SBDs and FETs using the β-Ga2O3 homoepitaxial wafers have been reported by many research groups.
In our group, the HVPE growth of Ga2O3 and In2O3 was investigated in an atmospheric pressure system based on thermodynamic analyses, using group-III monochlorides (GaCl and InCl) and oxygen (O2) as precursors and nitrogen (N2) carrier gas. It was found that high-purity single-crystal layers can be grown at around 1000°C. The growth rate was found to be controlled by the input partial pressure of group-III monochloride and reach above 10 μm/h.
In the homoepitaxy on β-Ga2O3(001) substrates, the n-type carrier density in the range 1E15 - 1E18 cm-3 was achieved. For the layer with the carrier density of 3E15 cm-3, the highest room-temperature mobility of 149 cm2/Vs was confirmed. In the heteroepitaxy of c-In2O3(111) on sapphire (0001) substrates, the lowest n-type carrier density of 2.2E16 cm-3 with relatively high mobility of 235 cm2/Vs was achieved. These results indicate that HVPE-grown single-crystal sesquioxides can be applicable to the fabrication of power devices.
Gallium oxide (Ga2O3) is an emerging material for power electronics. The final penetration in the market is limited by several issues, including a stable and effective isolation between different devices and between different regions of the same device. In this work, we analyze lateral and vertical isolation structures, obtained by Mg implantation and annealing at 1000°C in Halide Vapor Phase Epitaxy β-Ga2O3. By means of repeated current-voltage characterization, it is possible to detect a severe current collapse, which can be completely recovered by white light illumination. When a constant bias is applied, the current collapse increases in magnitude at higher bias, showing a stronger filling of the deep levels. The transients closely follow the stretched-exponential model, an indication that the charge trapping is originated by extended defects, mini-bands or surface states. From the recovery transients carried out at various temperatures, it is possible to extrapolate a dominant thermal activation energy of 0.34 eV. The results of the recovery transients under monochromatic illumination show gradual variation in a broad energy range, consistent with the presence of extended defects. Temperature-dependent current-voltage characterization highlights the good performance of the bulk isolation and the presence of a significant surface leakage. Long-term stability tests show that the lateral structure is able to withstand a higher voltage level before catastrophic failure, but is less stable and is affected by a time-dependent degradation process. Charge trapping at the surface may act as a field-limiting element and partially explain the experimental findings.
Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.