In this paper, we present a novel method for the fabrication of high density pattern in PET foils employing
nanoimprint lithorgraphy. The temperature and pressure dependence on the imprinted pattern were investigated. Well
resolved PET nanopatterns (sub-100nm resolution) were transferred successfully. It is observed that the grating with
different trench depths will demonstrates corresponding changes of diffraction intensity distribution. The grating
imprinted in PET foils could broader applications in the manufacture of nanophotonic structures owing to its excellent
flexibility and transparency. Based on the optimized imprint process, a novel method for the fabrication of phase gratings
and nanochannels is presented. This developed process can find broader applications in the manufacture of nanofluidic
channels and other nanophotonic structures.
A novel process that combines interference lithography and ion beam etching is presented for fabrication of magnetic
submicron structures and nanostructures in this paper. Instead of an antireflective coating, vertical standing wave
patterns were removed using oxygen descumming process. A series of magnetic submicronmeter structures were
fabricated on Co0.9Fe0.1 films by this technique. Fabrication of magnetic nanostructures was performed by using a high
exposure dose and modifications in optimized development conditions. A thin Au film was deposited on the sidewall of
the magnetic nanostructures to avoid the oxidation of Co and Fe. The effect of this method was confirmed by X-ray
photoelectron spectroscopy (XPS). Hysteresis loops measured by a highly sensitive superconducting quantum
interference device (SQUID) technique show the different magnetic properties of the magnetic patterns with different
critical dimensions.
KEYWORDS: Electron beam lithography, Silicon, Etching, Deep reactive ion etching, Photoresist processing, Nanolithography, Reactive ion etching, Photomasks, Chemically amplified resists, Standards development
As a chemically amplified resist, UVN30 has been evaluated for mask use in high density pattern rapid fabrication by
electron beam lithography. This resist displays excellent sensitivity and reasonable resolution for dense features. At
optimum conditions proximity effect is eliminated and 75 nm and 150 nm dense lines resolved in a 300 nm thick film
with writing field of 1mm2. With UVN30 mask, Si nanostructures are etched by non-switch DRIE etch chemistry
developed in this work, which achieves high etch rate and smooth sidewall. This method is a promising technique for fast
speed fabrication of nanophotonics, nanochannels and Si master stamps for nanoimprint.
We present results on the nanofabrication of high density patterns in SU-8 resist, based on nanoimprinting combined
with UV curing. The bilayer process using PMMA as sacrificial layer was developed to release the SU-8 layer to form
three dimensional structures. The SU-8 displays excellent imprint property and well defined patterns are achieved at at
low temperature, low pressure after demolding process. Using this technology, 300nm period SU-8 subwavelengh
gratings and nanochannels were fabricated on flat substrate with good fidelity. This sacrificial layer-assisted UV curing
imprint technology offers versatility and flexibility to stack polymer layers and sealed fluidic channels.
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