This paper investigates the ability of a novel and bespoke Monte Carlo simulation to model the experimental outcome of exposure of resist materials by electron beam. The resists are a family of organo-metallic Chromium rings (Cr8F8(O2CtBu)16), which have high resolution and low LER making them ideal candidates for the fabrication of the next generation of photomasks for EUV lithography. The model shows how the electron scattering in the resist material and the subsequent production of secondary electrons lead to the resists high resolution. The resist family can be modified to increase speed by up 17.3 times, by replacing the pivalate ligand with a methacrylate ligand, whilst still maintaining their desirable properties.
A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.
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