We report on the design and simulation of a novel Silicon-On-Insulator waveguide structures which when excited with
TM guided light, emit TE polarized radiation with controlled radiation characteristics[1]. The structures utilize parallel
leaky waveguides of specific separations. The structures are simulated using a full-vector mode-matching approach
which allows visualisation of the evolution of the propagating and radiating fields over the length of the waveguide
structure. It is shown that radiation can be resonantly enhanced or suppressed in different directions depending on the
choice of the phase of the excitation of the waveguide components. Steps toward practical demonstration are identified.
Design analysis of III-Nitride based intersubband quantum well absorption in the mid-IR regime (&lgr; ~ 3-5 &mgr;m) is
presented. The use of lattice-matched AlInGaN materials is advantageous because of its extremely fast intersubband
relaxation time &tgr;rel ~ 150-fs. The ability to engineer lattice-matched AlInGaN layer with GaN should allow realization of
multiple pairs of AlInGaN / GaN quantum well structures, which would otherwise be challenging due to the cracking
issues that might develop in conventional multiple pairs AlGaN / GaN heterostructures. The large conduction band offset
in III-Nitride heterostructures is also beneficial for minimizing dark current and thermal noise.
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