Dr. Yik-Khoon Ee Profile

Dr. Yik-Khoon Ee

Research Assistant at Lehigh Univ

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Author

Publications (13)

Proceedings Article | 10 February 2011 Paper

Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Renbo Song, Takahiro Toma, Le Zhao, G. S. Huang

Proceedings Volume 7954, 795418 (2011) https://doi.org/10.1117/12.875901

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Surface plasmons, Gold, Silver, Microlens array, Epitaxy, Internal quantum efficiency

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Proceedings Article | 9 February 2011 Paper

Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO2 microsphere arrays

Xiao-Hang Li, Yik-Khoon Ee, Renbo Song, Nelson Tansu

Proceedings Volume 7954, 79540U (2011) https://doi.org/10.1117/12.875980

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Refractive index, Gallium nitride, Silica, Quantum efficiency, Microlens array, Scanning electron microscopy, Titanium dioxide

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Proceedings Article | 12 March 2010 Paper

Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao, Guangyu Liu, Yik-Khoon Ee, Xiao-Hang Li, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu

Proceedings Volume 7602, 76021G (2010) https://doi.org/10.1117/12.842869

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Gallium nitride, Sapphire, Microlens array, Internal quantum efficiency, Quantum efficiency, Microlens, Active optics

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Proceedings Article | 12 February 2010 Paper

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

Yik-Khoon Ee, Xiao-Hang Li, Jeff Biser, Wanjun Cao, Helen Chan, Richard Vinci, Nelson Tansu

Proceedings Volume 7617, 76170G (2010) https://doi.org/10.1117/12.841503

KEYWORDS: Gallium nitride, Sapphire, Light emitting diodes, Aluminum, Quantum wells, Epitaxy, Scanning electron microscopy, Nanostructures, Indium gallium nitride, Vapor phase epitaxy

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Proceedings Article | 3 February 2009 Paper

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald Arif, G. Huang, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 7231, 72310E (2009) https://doi.org/10.1117/12.808542

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride, Electroluminescence, Calibration, Metalorganic chemical vapor deposition, Structural design, Polarization, Sapphire

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Proceedings Article | 3 February 2009 Paper

Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures

Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald Arif, James Gilchrist, Nelson Tansu

Proceedings Volume 7231, 72310U (2009) https://doi.org/10.1117/12.808600

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Silica, Gallium nitride, Monte Carlo methods, Ray tracing, Refractive index, Quantum efficiency, Glasses

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Proceedings Article | 2 September 2008 Paper

Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes

Nelson Tansu, Ronald Arif, Hongping Zhao, G. Huang, Yik-Khoon Ee

Proceedings Volume 7058, 705812 (2008) https://doi.org/10.1117/12.802482

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Polarization, Gallium nitride, Luminescence, Transition metals, Nanostructures, Metalorganic chemical vapor deposition, Temperature metrology

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Proceedings Article | 25 February 2008 Paper

Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm

Ronald Arif, Hongping Zhao, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6910, 691014 (2008) https://doi.org/10.1117/12.763362

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Luminescence, Gallium nitride, Transition metals, Polarization, Temperature metrology, Metalorganic chemical vapor deposition, Quantum efficiency

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Proceedings Article | 22 February 2008 Paper

Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Hongping Zhao, Ronald Arif, Yik Khoon Ee, Nelson Tansu

Proceedings Volume 6889, 688903 (2008) https://doi.org/10.1117/12.763804

KEYWORDS: Quantum wells, Indium gallium nitride, Laser damage threshold, Semiconductor lasers, Gallium nitride, Polarization, Active optics, Laser optics, Semiconductors, Indium nitride

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Proceedings Article | 13 February 2008 Paper

Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2 / polystyrene microlens arrays

Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald Arif, James Gilchrist, Nelson Tansu

Proceedings Volume 6910, 69100M (2008) https://doi.org/10.1117/12.763973

KEYWORDS: Light emitting diodes, Silica, Microlens array, Quantum wells, Picosecond phenomena, Indium gallium nitride, Microlens, Monte Carlo methods, Gallium nitride, Ray tracing

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Proceedings Article | 22 March 2007 Paper

Quantum 3D finite-difference-time-domain (Q-FDTD) analysis of InGaAs-GaAsP quantum-dot nanostructures

Yik-Khoon Ee, Yush Gupta, Ronald Arif, Nelson Tansu

Proceedings Volume 6468, 64681D (2007) https://doi.org/10.1117/12.700775

KEYWORDS: Indium gallium arsenide, Gallium arsenide, Nanostructures, 3D modeling, Quantum dots, Fourier transforms, Gallium, Finite-difference time-domain method, Computer simulations, Superposition

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Proceedings Article | 22 March 2007 Paper

Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the Mid-IR regime

Ronald Arif, Ravi Tummidi, Yik Khoon Ee, Nelson Tansu

Proceedings Volume 6468, 646803 (2007) https://doi.org/10.1117/12.700767

KEYWORDS: Quantum wells, Gallium nitride, Aluminum, Indium gallium nitride, Mid-IR, Absorption, Gallium, Transition metals, Heterojunctions, Chemical elements

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Proceedings Article | 28 February 2006 Paper

Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN

Ronald Arif, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6115, 61150Y (2006) https://doi.org/10.1117/12.646174

KEYWORDS: Quantum wells, Indium gallium nitride, Gallium nitride, Gallium, Semiconductor lasers, Light emitting diodes, Polarization, Semiconductors, Light sources, Gallium arsenide

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Showing 5 of 13 publications

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