IR Sensors and imagers using nanostructure based materials are being developed for a variety of
Defense and Commercial Applications. In this paper, we will discuss recent modeling effort and
the experimental work under way for development of next generation CNT and Graphene based
bolometer for these applications. We will discuss detector concepts that will provide next
generation high performance, high frame rate, and uncooled nano-bolometer for MWIR and
LWIR bands. We will discuss the path forward to demonstrate enhanced IR sensitivity for
bolometer arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety
of Defense Applications. In this paper, we will discuss recent modeling effort and the
experimental work under way for development of next generation carbon nanostructure based
infrared detectors and arrays. We will discuss detector concepts that will provide next generation
high performance, high frame rate, and uncooled nano-bolometer for MWIR and LWIR bands.
The critical technologies being developed include carbon nanostructure growth, characterization,
optical and electronic properties that show the feasibility for IR detection. Experimental results on
CNT nanostructures will be presented. We will discuss the path forward to demonstrate
enhanced IR sensitivity and larger arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety of Defense
Applications. In this paper, we will discuss recent modeling effort and the experimental work under way for
development of next generation carbon nanostructure based infrared detectors and arrays. We will discuss
detector concepts that will provide next generation high performance, high frame rate, and uncooled nanobolometer
for MWIR and LWIR bands. The critical technologies being developed include carbon
nanostructure growth, characterization, optical and electronic properties that show the feasibility for IR
detection. Experimental results on CNT nanostructures will be presented. We will discuss the path forward to
demonstrate enhanced IR sensitivity and larger arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety
of Defense Applications. In this paper, we will discuss recent modeling effort and the
experimental work under way for development of next generation carbon nanostructure based
infrared detectors and arrays. We will discuss detector concepts that will provide next generation
high performance, high frame rate, and uncooled nano-bolometer for MWIR and LWIR bands.
The critical technologies being developed include carbon nanostructure growth, characterization,
optical and electronic properties that show the feasibility for IR detection. Experimental results on
CNT nanostructures will be presented. We will discuss the path forward to demonstrate
enhanced IR sensitivity and larger arrays.
EO/IR Sensors have been developed for a variety of Military Systems Applications.
These include UV, Visible, SWIR, MWIR and LWIR Sensors. The conventional SWIR Sensors
using InGaAs Focal Plane Array (FPA) can operate in 0.4 - 1.8 micron region. Similarly, MWIR
Sensors use InSb and HgCdTe based FPA's that are sensitive in 3-5 and 8-14 micron region.
DOD investments in the last 10 years have provided the necessary building blocks for the IR
Sensors that are being deployed in the field.
In this paper, we discuss recent developments and work under way to develop Next
Generation nanostructure based EO/IR detectors that can potentially cover UV, Visible and IR
regions of interest. The critical technologies being developed include ZnO nanostructures with
wide band gap for UV detection and Carbon Nanostructures that have shown the feasibility for IR
detection. Experimental results on ZnO based nanostructures demonstrate enhanced UV
sensitivity and path forward for larger arrays. Similarly, recent works on carbon nanostructures
have shown the feasibility of IR detection. Combining the two technologies in a sensor can
provide multispectral capability.
We have developed techniques to model electron dynamics in carbon nanotubes and hypothetical field effect devices that incorporate nanotubes into their structure. We use both Monte Carlo methods that are based on semiclassical transport, and distributed analyses that utilize quantum corrected semiconductor equations. The MC calculations predict velocity oscillations that are spatially distributed along the carbon nanotube. A quantum corrected semiconductor mathematical model is presented for CNT-MOSFET device simulation. Calculations predict improved performance of CNT-MOSFETs over conventional structures under certain conditions.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.