IR Sensors and imagers using nanostructure based materials are being developed for a variety of
Defense and Commercial Applications. In this paper, we will discuss recent modeling effort and
the experimental work under way for development of next generation CNT and Graphene based
bolometer for these applications. We will discuss detector concepts that will provide next
generation high performance, high frame rate, and uncooled nano-bolometer for MWIR and
LWIR bands. We will discuss the path forward to demonstrate enhanced IR sensitivity for
bolometer arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety
of Defense Applications. In this paper, we will discuss recent modeling effort and the
experimental work under way for development of next generation carbon nanostructure based
infrared detectors and arrays. We will discuss detector concepts that will provide next generation
high performance, high frame rate, and uncooled nano-bolometer for MWIR and LWIR bands.
The critical technologies being developed include carbon nanostructure growth, characterization,
optical and electronic properties that show the feasibility for IR detection. Experimental results on
CNT nanostructures will be presented. We will discuss the path forward to demonstrate
enhanced IR sensitivity and larger arrays.
EO/IR Sensors and imagers using nanostructure based materials are being developed for a variety
of Defense Applications. In this paper, we will discuss recent modeling effort and the
experimental work under way for development of next generation carbon nanostructure based
infrared detectors and arrays. We will discuss detector concepts that will provide next generation
high performance, high frame rate, and uncooled nano-bolometer for MWIR and LWIR bands.
The critical technologies being developed include carbon nanostructure growth, characterization,
optical and electronic properties that show the feasibility for IR detection. Experimental results on
CNT nanostructures will be presented. We will discuss the path forward to demonstrate
enhanced IR sensitivity and larger arrays.
We have developed techniques to model electron dynamics in carbon nanotubes and hypothetical field effect devices that incorporate nanotubes into their structure. We use both Monte Carlo methods that are based on semiclassical transport, and distributed analyses that utilize quantum corrected semiconductor equations. The MC calculations predict velocity oscillations that are spatially distributed along the carbon nanotube. A quantum corrected semiconductor mathematical model is presented for CNT-MOSFET device simulation. Calculations predict improved performance of CNT-MOSFETs over conventional structures under certain conditions.
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