In this study, we conduct a comparative analysis of an InAs/InP quantum dot diode laser and an InGaAsP/InP quantum well laser. Both lasers are monolithic, 840 μm long devices. They have a two-part buried heterostructure with 10%/90% reflection coated facets and emit at 1550 nm (quantum dot laser) respectively 1570 nm (quantum well laser). In passive mode-locking operational mode, the larger section of both devices is continuously pumped with forward current, while the second, smaller section (50 μm) is operated with reverse absorber voltage. In self mode-locking operation both sections of the laser are connected and pumped with forward current. Femtosecond pulses have been detected in both operational modes.
A photonic engine for the integration of multi-lane optical transceivers is presented. The building blocks are InP-based electro-absorption modulated lasers and photodiodes capable of operating at 50 GBaud with PAM-4 modulation, and a low-cost polymer waveguiding chip providing routing of the multiple lanes and connectivity towards standard single-mode fibers. An automatic process for the hybrid assembly of the different building blocks has been developed, and photonic integrated circuits with up to 16 lanes have been demonstrated. Furthermore, high-frequency flexible interconnects with bandwidths beyond 100 GHz provide a connectivity solution between photonics and high-speed electronics.
We present a novel Dual DFB laser for high-speed direct modulation. The design comprises two identical quarter wavelengths shifted DFBs in mirrored configuration separated by a passive waveguide. This structure utilizes the effect of photon-photon resonance to increase the modulation bandwidth of 57.6 GHz. Operation of these devices under large signal modulation at 56 Gbps and 72 Gbps is demonstrated.
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