EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch at present. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic ter/tetrapolymers containing novel lactone derivatives - LCHO and LAATB - as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these photoresists, we evaluated the characteristics of lactone derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.
EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic terpolymers containing novel hydrophilic derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of hydrophilic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.
EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices below 1X nm
half-pitch. Many efforts have revealed that the effective proton generation and the control of the generated acid diffusion
are required to improve the breakthrough of the RLS trade-off. For the development of EUV resists, the novel protecting
derivatives were designed. To clarify the lithographic performance of these derivatives, we synthesized the acrylic
polymers containing these derivatives as model photopolymers and exposed the resist samples based on these polymers
to EUV/EB radiation. On the basis of the lithographic performances of these resist sample, we evaluated the
characteristics of novel protecting derivatives upon exposure to EUV/EB radiation. We discuss the relationship between
the chemical structures of these derivatives and lithographic performance.
Extreme ultraviolet (EUV) lithography is the most favorable process for high volume manufacturing of semiconductor
devices at 22nm half-pitch and below. Many efforts have revealed that the phenolic hydroxyl groups of polymers are
also an effective proton source in acid generation in EUV resists, and the effective proton generation and the control of
the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness -
sensitivity (RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic
terpolymers containing phenolic and alcoholic hydroxyl derivatives as model photopolymers and exposed the resist
samples based on these polymers to EUV and electron beam (EB) radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of phenolic and alcoholic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.
Extreme ultraviolet (EUV) lithography is the most favorable process as next-generation lithography. For the
development of EUV resists, phenolic materials such as poly (4-hydroxystyrene) have been investigated. Phenolic
hydroxyl groups of polymers play an important role in acid diffusion, dissolution kinetics, and adhesion to substrates.
Besides these important roles, phenolic hydroxyl groups are also an effective proton source in acid generation in EUV
resists. However, the roles of alcohol hydroxyl groups have not been well-studied. To clarify the difference between
phenolic and alcoholic hydroxyl groups upon exposure to EUV radiation, we synthesized acrylic terpolymers containing
alcoholic hydroxyl groups as model photopolymers and exposed the resist samples based on these polymers to EUV
radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of
alcoholic hydroxyl groups upon exposure to EUV radiation. We discuss the relationship between the chemical structures
of these derivatives and lithographic performance.
Photoresists containing adamantane derivatives have been widely used with ArF exposure tools. However, the
performance characteristics of adamantane derivatives with other optical sources, such as extreme ultraviolet (EUV) and
electron beam (EB) sources, have not been well-studied. To clarify such performance characteristics for several exposure
sources, we synthesized acrylic terpolymers containing adamantyl methacrylates as model photopolymers and exposed
the resist samples based on these polymers to ArF, EUV and EB radiations. On the basis of the lithographic performance
characteristics of these resist samples, we evaluated the performance characteristics of adamantane derivatives upon
exposure to different radiations. We discuss the relationship between the chemical structures of adamantane derivatives
and lithographic performance characteristics.
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