High-temperature AlN homoepitaxial growth up to 1600℃ by HVPE was investigated. High-purity AlN with excellent crystallinity was reported where HVPE-AlN was homoepitaxially grown on the PVT-AlN substrate. However, quartz-derived impurities incorporation was slightly problematic in the HVPE-AlN. In this study, a new reactor was introduced that is a quartz glass reactor including a high-temperature growth zone constructed with heat-resistant materials. O and Si impurity incorporation was reduced with high growth rates of around 150 μm/h by the newly introduced high-temperature growth system.
This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.
The development of high-power and reliable deep-UV optical devices requires low dislocation density AlN substrates. In this study, thick AlN layers were homoepitaxially grown on PVT-AlN(0001) substrates by HVPE method at a growth rate above 100 μm/h. The grown layer showed low dislocation densities of less than 1E4 cm^-2 and a high deep-UV optical transparency. Recent expansions in both diameter of the substrate and size of the growth reactor have enabled mass-production of 2-inch-diameter HVPE-AlN substrates for deep-UV optical devices. This work was partially supported by Innovative Science and Technology Initiative for Security Grant Number JPJ004596, ATLA, Japan.
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