Silicon (Si) photodiodes play a crucial role in complementary metal-oxide-semiconductor (CMOS) image sensors, particularly in visible cameras, and are increasingly in demand for infrared or short-wavelength (SWIR) cameras in modern autonomous vehicles operating under various weather conditions. However, the bandgap energy of 1.12eV in Si limits its capability to detect light in the infrared range, only allowing visible light detection. In this study, we propose transparent, quantum-thickness, Schottky-junction photodiodes on Si for light detection from visible to SWIR wavelengths. We employ an atomically thin TiO2 interfacial layer between an n-type Si substrate and a nanometer-thick metallic layer, which is positioned beneath a transparent conductive oxide (TCO) layer, to create n-Si/TiO2/TiN/ITO multilayered Schottky-junction photodiodes. Without the typical p-n junction in Si, we observed photocurrents through interband transitions by incident photons in the wavelength range of 400 ~ 1,100nm. Additionally, small but noticeable amounts of photocurrent were also measured by internal photoemission (IPE) via hot carrier generation even at the wavelength of 1,310nm. The embedded TiO2 layer significantly reduced dark current by two orders of magnitude with little change in photocurrent or quantum efficiency. This can be attributed to the low conduction band offset of the TiO2 semiconductor, which contributes to a quantum tunneling barrier without changing the Schottky barrier height and disturbing the internal photoemission process.
InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization into tiny pixels for ultrahigh-density displays for augmented reality (AR). Her, we report using tailored ion implantation (TIIP) to fabricate highly-efficient, electrically-driven pixelated InGaN microLEDs (μLEDs) at the mid-submicron scale (line/space of 0.5/0.5 μm. Moreover, we demonstrate high-density TFT and QD C/F integration technologies.
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