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Haoyuan Ma
at Beijing University of Posts and Telecommunications
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Publications (1)
Proceedings Article | 4 November 2016 Paper
Model of blocking dislocations for III-V semiconductor grown on nano-trench patterned Si substrates
Haoyuan Ma, Jun Wang, Zhuo Cheng, Yibing Fan, Ran Zhang, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren
Proceedings Volume 10027, 100271B (2016) https://doi.org/10.1117/12.2245684
KEYWORDS: Silicon, Group III-V semiconductors, Epitaxial lateral overgrowth, Gallium arsenide, Photomasks, Solids, Photonics, Systems modeling, Optical communications, Telecommunications
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