Mr. Gilbert V. Shelden Profile

Gilbert V. Shelden

Retired

SPIE Involvement:

Author

Proceedings Article | 2 May 2008 Paper

Mask industry assessment trend analysis

Gilbert Shelden, Patricia Marmillion, Greg Hughes

Proceedings Volume 6792, 679202 (2008) https://doi.org/10.1117/12.798511

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Data processing, Pellicles, Phase shifts, Data conversion, Microelectronics, Printing, Manufacturing

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Proceedings Article | 23 October 2007 Paper

Mask Industry Assessment: 2007

Gilbert Shelden, Patricia Marmillion, Greg Hughes

Proceedings Volume 6730, 673003 (2007) https://doi.org/10.1117/12.730158

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Pellicles, Glasses, Manufacturing, Data processing, Photomask technology, Inspection, Logic

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Proceedings Article | 3 May 2007 Paper

Mask industry assessment trend analysis 2006

Gilbert Shelden, Patricia Marmillion

Proceedings Volume 6533, 653303 (2007) https://doi.org/10.1117/12.731817

KEYWORDS: Photomasks, Optical proximity correction, Binary data, Data processing, Pellicles, Data conversion, Microelectronics, Printing, Logic, Phase shifts

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Proceedings Article | 20 October 2006 Paper

Mask industry assessment: 2006

Gilbert Shelden, Patricia Marmillion

Proceedings Volume 6349, 634902 (2006) https://doi.org/10.1117/12.684179

KEYWORDS: Photomasks, Binary data, Data processing, Microelectronics, Pellicles, Yield improvement, Glasses, Manufacturing, Semiconductors, Databases

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Proceedings Article | 21 June 2006 Paper

Mask industry assessment trend analysis

Gilbert Shelden, Scott Hector, Pat Marmillion, Michael Lercel

Proceedings Volume 6281, 628103 (2006) https://doi.org/10.1117/12.692628

KEYWORDS: Photomasks, Binary data, Manufacturing, Data processing, Optical proximity correction, Data conversion, Microelectronics, Printing, Pellicles, Semiconductors

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Proceedings Article | 4 November 2005 Paper

Mask industry assessment: 2005

Gilbert Shelden, Scott Hector

Proceedings Volume 5992, 599202 (2005) https://doi.org/10.1117/12.613333

KEYWORDS: Photomasks, Manufacturing, Binary data, Data processing, Microelectronics, Databases, Semiconductors, Semiconductor manufacturing, Glasses, Phase shifts

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Proceedings Article | 6 December 2004 Paper

Can we afford to replace chrome?

Gilbert Shelden, Long He, Scott Hector, Walt Trybula

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.565124

KEYWORDS: Photomasks, Manufacturing, Etching, Extreme ultraviolet lithography, Reflectivity, Yield improvement, Inspection, Optical lithography, Semiconducting wafers, Chromium

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Chrome-based absorbers have been the mainstay of the photomask industry for three decades. While chrome is attractive because of its durability and opacity, it conversely poses challenges for etch and repair. Due to large capital investments, any new absorber must be designed to work with existing scanners, mask writers, and mask inspection tools. Furthermore changing absorber materials may not improve defect control in mask blank fabrication, which is a paramount concern in blank fabrication. Consequently, blank manufacturers are reluctant to change from chrome. In terms of return on investment (ROI), the only driver to switch technologies is achieving higher mask and wafer yields. This is a reasonable assumption as both etch and repair tool suppliers believe a non-chrome material like tantalum (Ta) compounds would significantly improve their capabilities with known technologies. A high level estimate shows that with even aggressive improvement assumptions, a 100% conversion from chrome does not save money. Based on the current International SEMATECH (ISMT) cost of ownership (COO) model and improved yields for critical dimension (CD) and defects, a case can be made for converting at and below 100 nm ground rules. An industry wide conversion from chrome to a non-chrome absorber is estimated to cost $100M. By contrast, blank suppliers are reportedly spending "multiple" millions of dollars to improve chrome per year. A widespread concern is whether binary optical masks have enough life left to provide sufficient ROI. Optical lithography will continue to be of use in the foreseeable future. Even as leading-edge production moves to new technology, the main manufacturing volumes will continue to create significant demand for masks for 100 nm to 45 nm for many years. With the industry currently pushing extreme ultraviolet lithography (EUVL), the best situation would be for EUVL and optical lithography to choose the same absorber material. This creates a winning situation for the industry independent of EUVL implementation timing. Today Ta-based films are a reasonable choice.

Proceedings Article | 6 December 2004 Paper

Mask industry assessment: 2004

Gilbert Shelden, Scott Hector

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.565034

KEYWORDS: Photomasks, Manufacturing, Data processing, Binary data, Microelectronics, Databases, Semiconductors, Pellicles, Glasses, Phase shifts

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Proceedings Article | 27 December 2002 Paper

Aerial-image microscopes for the inspection of defects in EUV masks

Anton Barty, John Taylor, Russell Hudyma, Eberhard Spiller, Donald Sweeney, Gilbert Shelden, Jan-Peter Urbach

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467918

KEYWORDS: Imaging systems, Extreme ultraviolet, Photomasks, Zone plates, Microscopes, Extreme ultraviolet lithography, Objectives, Mirrors, Inspection, EUV optics

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Proceedings Article | 27 December 2002 Paper

Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks

Alan Stivers, Ted Liang, Michael Penn, Barry Lieberman, Gilbert Shelden, James Folta, Cindy Larson, Paul Mirkarimi, Christopher Walton, Eric Gulliksong, Moonsuk Yi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468199

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect detection, Particles, Gold, Extreme ultraviolet lithography, Semiconducting wafers, Optical spheres, Multilayers

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Proceedings Article | 16 August 2002 Paper

Review of the 2001 ITRS update

Gilbert Shelden

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479341

KEYWORDS: Photomasks, Lithography, Etching, Optical proximity correction, Optics manufacturing, Semiconducting wafers, Optical lithography, Resolution enhancement technologies, Extreme ultraviolet lithography, Semiconductors

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In 1992 the SIA published the first roadmap for semiconductors. Since then formal updates have been published in 1994, 1997, 1999 and now 2001. The 2001 ITRS update will not be published until Dec. 2001 so the tables in this document may change in the final release. The complete 2001 update can be found at: http:/'/pubiic.i.trsnet/ Sinc e the earliest days of the microelectronics industry, optical lithography has been the mainstream technology for volume manufacturing, and it is expected to continue as such through the 65 nm node, through the application of resolution enhancement techniqies such as off-axis illumination (OAI), phase shifting masks (PSM) and optical proximity corrections (OPC). In addition to resolution enhancement techniques, wavelength reductions (248 nnr 193 nm-) 157 nm) and lenses with increasing numerical apertures and decreasing aberrations will be required to extend the life of optical lithography. The requirements of the 45 nm node and beyond are viewed as beyond the capabilities of optical lithography. Extension of the Roadmap will require the development of next- generation lithography (NGL) technologies, such extreme ultraviolet lithography (EUV) and electron projection lithography (EPL). Because next generation lithographies will require the development of substantially new infrastructure, the costs of these technolo gies will put great pressure on manufacturing costs. Mask-making capability and cost escalation have become the major limiter to lithography progress. The roadmap acceleration has been very troublesome to the mask industry. CD control is falling behind the requirements of the chipmakers Where it might be said that the mask makers have been hit by the "perfect storm". First the two year cycle has reduced the available time for development, Secondly the gate widths post etch for MPU's have reduced even Ihster, And finally the mask industry has been asked to absorb the entire impact of the increased MEF associated with Low Kl Lithography. Mask equipment and process capabilities are in manufacturing for complex OPC and PSM.. Mask processes for Post 193nm technologies are in research and development.

Proceedings Article | 14 September 2001 Paper

Alternating PSM mask performance: a study of multiple fabrication technique results

Martin McCallum, Patricia Gabella, Gilbert Shelden, Kevin Kjoller, Edward Miller

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435771

KEYWORDS: Photomasks, Metrology, Etching, Reactive ion etching, Manufacturing, Reticles, Anisotropic etching, Image processing, Phase measurement, Fabrication

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Proceedings Article | 22 January 2001 Paper

Is it time to change mask magnification?

Gilbert Shelden

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410757

KEYWORDS: Photomasks, Reticles, Lithography, Manufacturing, Semiconductors, Astatine, Manufacturing equipment, Rockets, Etching, Chlorine

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Proceedings Article | 3 July 1995 Paper

Sizing the next generation of optical photomasks

Gilbert Shelden, Anne Rudack, Rajeev Singh, Wayne Smith, Alvina Williams

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212801

KEYWORDS: Reticles, Photomasks, Manufacturing, Semiconductors, Semiconducting wafers, Semiconductor manufacturing, Optical lithography, Pellicles, Photomask technology, Lithography

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