Dr. Geoffrey Yeap Profile

Dr. Geoffrey Yeap

VP of Technology at Qualcomm Inc

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Author

Publications (5)

Proceedings Article | 28 March 2014 Paper

Technology-design-manufacturing co-optimization for advanced mobile SoCs

Da Yang, Chock Gan, P. Chidambaram, Giri Nallapadi, John Zhu, S. Song, Jeff Xu, Geoffrey Yeap

Proceedings Volume 9053, 90530N (2014) https://doi.org/10.1117/12.2047370

KEYWORDS: System on a chip, Metals, Optical lithography, Mobile devices, Manufacturing, Electronic design automation, Semiconductors, Lithium, Consumer electronics, Double patterning technology

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Proceedings Article | 1 September 1999 Paper

Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs

Qi Xiang, Bin Yu, Geffrey Yeap, Ming-Ren Lin

Proceedings Volume 3881, (1999) https://doi.org/10.1117/12.360552

KEYWORDS: Indium, Reliability, Oxides, Doping, Boron, Human-computer interaction, Capacitors, Diffusion, Control systems, Transistors

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Proceedings Article | 4 September 1998 Paper

Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

Geoffrey Yeap, Miryeong Song, Qi Xiang, K. Michael Han, Ming-Ren Lin

Proceedings Volume 3506, (1998) https://doi.org/10.1117/12.323979

KEYWORDS: Oxides, Nitrous oxide, NOx, Scanning electron microscopy, Field effect transistors, Reliability, Semiconducting wafers, Transmission electron microscopy, Nitrogen, Human-computer interaction

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Proceedings Article | 4 September 1998 Paper

Sub-100-nm and deep sub-100-nm MOS transistor gate patterning

Qi Xiang, Subash Gupta, Chris Spence, Bhanwar Singh, Geoffrey Yeap, Ming-Ren Lin

Proceedings Volume 3506, (1998) https://doi.org/10.1117/12.323977

KEYWORDS: Etching, Transistors, Oxides, Optical lithography, Metrology, Scanning electron microscopy, Lithography, Molybdenum, Deep ultraviolet, Photoresist materials

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Proceedings Article | 4 September 1998 Paper

High-k scaling for gate insulators: an insightful study

Srinath Krishnan, Geoffrey Yeap, Bin Yu, Qi Xiang, Ming-Ren Lin

Proceedings Volume 3506, (1998) https://doi.org/10.1117/12.323991

KEYWORDS: Dielectrics, Silica

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