Laser scribing is a promising technology for thin-film ablation in photovoltaic device manufacturing, particularly with non-conventional materials. This study explores copper oxides as alternative light absorbers due to their abundance and safe sourcing. Transition metal oxide (TMO) layers, like molybdenum oxide (MoO3), vanadium oxide (V2O5), and tungsten oxide (WO3), are investigated as selective contacts for advanced semiconductor devices. The research employs a high-powered fs laser (EKSPLA FemtoLux30, 30W, 1030 nm) with tunable pulse lengths (350 fs~1ps) and various wavelengths (1064, 532, and 355 nm) to determine the threshold ablation fluence and achieve optimal thin-film removal without substrate alteration. Diode isolation and electrical characteristics demonstrate the process's high quality.
Transition metal oxide (TMOs) layers have interesting properties as selective contacts for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and tungsten (WO3) show good behaviour acting as front hole-selective contacts for n-type crystalline silicon heterojunction solar cells. Laser scribing has been widely used for thin-film ablation and seems the appropriate technology for device manufacturing with such non-conventional materials. In this work, we study the laser scribing of non-stoichiometric evaporated WOx, VOx, and MoOx films with three different wavelengths (1064, 532, and 355 nm) with pulse duration in the ns and ps regimes. The selection of the proper laser source allows a wide parametric window, with complete removal of the TMO films and no alteration of the silicon substrate. The results on the isolation of diodes and their electrical characteristics show the quality of the laser scribing processes.
Laser-Induced Forward Transfer (LIFT) is a versatile technique, allowing the transfer of a wide range of materials, with no contact, and high accuracy. Here we show a complete study on the deposition by LIFT, focusing on the deposition of a high viscosity silver paste, from the LIFT process parametrization to the metallization and characterization of heterojunction silicon solar cells.
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