Laser scribing is a promising technology for thin-film ablation in photovoltaic device manufacturing, particularly with non-conventional materials. This study explores copper oxides as alternative light absorbers due to their abundance and safe sourcing. Transition metal oxide (TMO) layers, like molybdenum oxide (MoO3), vanadium oxide (V2O5), and tungsten oxide (WO3), are investigated as selective contacts for advanced semiconductor devices. The research employs a high-powered fs laser (EKSPLA FemtoLux30, 30W, 1030 nm) with tunable pulse lengths (350 fs~1ps) and various wavelengths (1064, 532, and 355 nm) to determine the threshold ablation fluence and achieve optimal thin-film removal without substrate alteration. Diode isolation and electrical characteristics demonstrate the process's high quality.
The fabrication of multicomponent devices presents a challenge when facing the densification process. In the case of a microcapacitor, it involves a matrix of a dielectric componenet, such a Barium Titanate (BTO), sandwiched between electrodes for which a metallic material is commonly used. The material phases involved possesses different thermal properties which make impossible to densify at the same temperature and time. The combination of different laser technologies such as Laser-Induced Forward Transfer (LIFT) and Selective Laser Sintering (SLS) could be the key to fabricate these multicomponent devices by using digitazable technologies. In previous works the LIFT deposition and the Selective Laser Sintering of BTO has been prospected. Only superficial densification has been obtained on the dielectric component by SLS. In this work, LIFT and conventional sintering of BTO combined with the LIFT deposition and SLS of silver pastes are proposed for the fabrication of a first prototype.
Transition metal oxide (TMOs) layers have interesting properties as selective contacts for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and tungsten (WO3) show good behaviour acting as front hole-selective contacts for n-type crystalline silicon heterojunction solar cells. Laser scribing has been widely used for thin-film ablation and seems the appropriate technology for device manufacturing with such non-conventional materials. In this work, we study the laser scribing of non-stoichiometric evaporated WOx, VOx, and MoOx films with three different wavelengths (1064, 532, and 355 nm) with pulse duration in the ns and ps regimes. The selection of the proper laser source allows a wide parametric window, with complete removal of the TMO films and no alteration of the silicon substrate. The results on the isolation of diodes and their electrical characteristics show the quality of the laser scribing processes.
Laser-Induced Forward Transfer (LIFT) is a versatile technique, allowing the transfer of a wide range of materials, with no contact, and high accuracy. Here we show a complete study on the deposition by LIFT, focusing on the deposition of a high viscosity silver paste, from the LIFT process parametrization to the metallization and characterization of heterojunction silicon solar cells.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.