The temperature dependences of the resistivity of detector-grade semi-insulating CdTe and Cd0.9Zn0.1Te single crystals were
investigated. The investigations have revealed that the thermal activation energy can be higher than Eg/2 at T → 0 K or
considerably less than this value, although the Fermi level is located near the middle of the band gap. It is shown that such
an "anomalous" behavior of the electrical characteristics is explained in detail by the features of the compensation of deep
acceptor levels in the semiconductor band gap. A method based on the electroneutrality equation is proposed for the
determination of the ionization energy and compensation degree of the impurity (defect), which is responsible for the
conductivity of the material. The results extracted with the use of this method lead to the prediction that the inversion of the
conductivity type of the semiconductor under certain conditions can occur as the temperature varies during operation of a
Cd(Zn)Te-based device.
KEYWORDS: Sensors, Capacitance, Amplifiers, Electronics, Signal processing, Imaging systems, Analog electronics, Electrodes, Digital recording, Resistance
The Photon 4-dimensional Digital Information (P4DI) ASIC is a new generation of 2D imaging chips to be connected to
a pixel sensor using the bump and flip chip technologies. It gives in digital format energy, time and position information
for each recorded event. In pixel digitization and storage of the time and amplitude signal are performed. Circuit
solutions for gain and offset variation compensation have been implemented. The ASIC works in sparse data scan mode.
An 8x8 pixels prototype has been manufactured in UMC 0.18um CMOS technology and evaluated
Native and impurity point defects, complexes and extended defects which are formed during CdTe crystal growth and
fabrication of diode structure are crucial for CdTe-based X-ray and gamma-ray detectors, cause deterioration of
parameters and limit widespread practical application. Therefore, control of defect formation in CdTe crystals and device
structures is important to achieve excellent charge collection efficiency and high energy resolution. Photoelectric,
electrical and spectral properties of M-p-n structured CdTe diodes fabricated by the optimized excimer laser doping
technique have been studied at different conditions. To make the diodes, a relatively thick In film was deposited on the
surface of CdTe crystal and then it was irradiated with a laser pulse. The film served as an n-type dopant source as well
as an electrode after laser irradiation. A Schottky contact was deposited on the opposite side of CdTe crystals. The
In/CdTe/Au detectors have showed promise for nuclear radiation devices. However, the variations of I-V and C-V
characteristics, fluctuations of time dependences of leakage current and degradation of spectral characteristics were
evidences that electrically active defects cause non-uniform carrier trapping and induce excessive noise, deteriorating the
detector performance.
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