Laser scribing is a promising technology for thin-film ablation in photovoltaic device manufacturing, particularly with non-conventional materials. This study explores copper oxides as alternative light absorbers due to their abundance and safe sourcing. Transition metal oxide (TMO) layers, like molybdenum oxide (MoO3), vanadium oxide (V2O5), and tungsten oxide (WO3), are investigated as selective contacts for advanced semiconductor devices. The research employs a high-powered fs laser (EKSPLA FemtoLux30, 30W, 1030 nm) with tunable pulse lengths (350 fs~1ps) and various wavelengths (1064, 532, and 355 nm) to determine the threshold ablation fluence and achieve optimal thin-film removal without substrate alteration. Diode isolation and electrical characteristics demonstrate the process's high quality.
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