Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning

D. Pudis; J. Skriniarova; I. Lettrichova; A. Laurencikova; A. Bencurova; J. Kovac; J. Novak

doi:10.1117/12.2087168

5 December 2014 Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning

D. Pudis, J. Skriniarova, I. Lettrichova, A. Laurencikova, A. Bencurova, J. Kovac, J. Novak

Author Affiliations +

Proceedings Volume 9441, 19th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics; 94410P (2014) https://doi.org/10.1117/12.2087168
Event: XIX Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2014, Jelenia Gora, Poland

Abstract

We demonstrate capabilities of near-field scanning optical microscopy (NSOM) in collection and illumination mode. NSOM in collection mode was used for high resolution characterization of optical field of patterned light emitting diodes. In the scanned near field, we resolved enhanced emission from patterned regions with high resolution images of emitting surface. Also NSOM in illumination mode was used for patterning of predefined structures on semiconductor surfaces. For the diode patterning the electron beam direct writing lithography was used. Using NSOM lithography we prepared predefined planar structures in GaP surface. In the small open areas of predefined surface structure GaP nanowires were grown.

Citation Download Citation

D. Pudis, J. Skriniarova, I. Lettrichova, A. Laurencikova, A. Bencurova, J. Kovac, and J. Novak "Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning", Proc. SPIE 9441, 19th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 94410P (5 December 2014); https://doi.org/10.1117/12.2087168

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