Paper
19 March 2015 Intra-field patterning control using high-speed and small-target optical metrology of CD and focus
Hugo Cramer, Stefan Petra, Bastiaan Onne Fagginger Auer, Henk-Jan Smilde, Baukje Wisse, Steven Welch, Stefan Kruijswijk, Paul Hinnen, Bart Segers, Christian Leewis, Frank Staals, Maryana Escalante Marun, Stuart Young, Wei Guo, Arie den Boef
Author Affiliations +
Abstract
The continuing trend of shrinking dimension and the related specifications requires tightening of control loops. To support the tighter control loops, the metrology sampling plans will require increasing sampling density and frequency. This study shows that tighter control of scanner focus and AEI CD and profile parameters requires sampling schemes with intra-field measurement points, and a frequent update of the corrections. This drives the need for high-speed smalltarget metrology. Experiments show that this can be achieved by the YieldStar angle resolved scatterometer, demonstrating measurements on areas of 16×16μm2 for focus metrology and 12×12μm2 for CD metrology, at a MAM time below 0.5s.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hugo Cramer, Stefan Petra, Bastiaan Onne Fagginger Auer, Henk-Jan Smilde, Baukje Wisse, Steven Welch, Stefan Kruijswijk, Paul Hinnen, Bart Segers, Christian Leewis, Frank Staals, Maryana Escalante Marun, Stuart Young, Wei Guo, and Arie den Boef "Intra-field patterning control using high-speed and small-target optical metrology of CD and focus", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241F (19 March 2015); https://doi.org/10.1117/12.2085957
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Metrology

Etching

Critical dimension metrology

Scanners

Scatterometry

Optical lithography

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