Efficient hybrid metrology for focus, CD, and overlay

W. T. Tel; B. Segers; R. Anunciado; Y. Zhang; P. Wong; T. Hasan; C. Prentice

doi:10.1117/12.2257965

28 March 2017 Efficient hybrid metrology for focus, CD, and overlay

W. T. Tel, B. Segers, R. Anunciado, Y. Zhang, P. Wong, T. Hasan, C. Prentice

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101452E (2017) https://doi.org/10.1117/12.2257965
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

In the advent of multiple patterning techniques in semiconductor industry, metrology has progressively become a burden. With multiple patterning techniques such as Litho-Etch-Litho-Etch and Sidewall Assisted Double Patterning, the number of processing step have increased significantly and therefore, so as the amount of metrology steps needed for both control and yield monitoring. The amount of metrology needed is increasing in each and every node as more layers needed multiple patterning steps, and more patterning steps per layer. In addition to this, there is that need for guided defect inspection, which in itself requires substantially denser focus, overlay, and CD metrology as before. Metrology efficiency will therefore be cruicial to the next semiconductor nodes. ASML's emulated wafer concept offers a highly efficient method for hybrid metrology for focus, CD, and overlay. In this concept metrology is combined with scanner's sensor data in order to predict the on-product performance. The principle underlying the method is to isolate and estimate individual root-causes which are then combined to compute the on-product performance. The goal is to use all the information available to avoid ever increasing amounts of metrology.

Citation Download Citation

W. T. Tel, B. Segers, R. Anunciado, Y. Zhang, P. Wong, T. Hasan, and C. Prentice "Efficient hybrid metrology for focus, CD, and overlay", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452E (28 March 2017); https://doi.org/10.1117/12.2257965

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