Paper
17 March 2009 Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control
Jo Finders, Mircea Dusa, Bert Vleeming, Timon Fliervoet, Birgitt Hepp, Henry Megens, Remco Groenendijk, John Quaedackers, Evert Mos, Christian Leewis, Frank Bornebroek, Mireille Maenhoudt, Marc Leblans, Tom Vandeweyer, Gayle Murdoch, Efrain Altamirano Sanchez
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Abstract
In this paper we present a methodology to investigate and optimize the CD balance between the four features of a final 32nm lines and space pattern created by spacer pitch doubling. Metrology (SEM and scatterometry) was optimized to measure and separate the two lines and the two spaces of the 32nm features. In case a space unbalance emerged during the various processing steps such as etch and deposition, this was compensated by calculating and feed-back local dose offsets to the scanner. For the spacer process used in this study we observe 20..40% improvement in space CDU and space balance, when applying the dose corrections.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jo Finders, Mircea Dusa, Bert Vleeming, Timon Fliervoet, Birgitt Hepp, Henry Megens, Remco Groenendijk, John Quaedackers, Evert Mos, Christian Leewis, Frank Bornebroek, Mireille Maenhoudt, Marc Leblans, Tom Vandeweyer, Gayle Murdoch, and Efrain Altamirano Sanchez "Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control", Proc. SPIE 7274, Optical Microlithography XXII, 72740R (17 March 2009); https://doi.org/10.1117/12.814091
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Etching

Metrology

Scatterometry

Scanning electron microscopy

Scanners

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